IRFNJ9130 Todos los transistores

 

IRFNJ9130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFNJ9130
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SMD05
     - Selección de transistores por parámetros

 

IRFNJ9130 Datasheet (PDF)

 ..1. Size:18K  semelab
irf9130smd05 irfnj9130.pdf pdf_icon

IRFNJ9130

IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (

 9.1. Size:18K  semelab
irfnjz48.pdf pdf_icon

IRFNJ9130

IRFNJZ48MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS 55VID(cont) 22A2RDS(on) 0.016 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (0.286) SIMP

 9.2. Size:36K  semelab
irfn130smd05 irfnj130.pdf pdf_icon

IRFNJ9130

IRFNJ130NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.28

 9.3. Size:34K  semelab
irfnj540.pdf pdf_icon

IRFNJ9130

IRFNJ540MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS 100VID(cont) 12A2RDS(on) 0.052 0.127 (0.005)FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (0.286) SIM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: UT3400G-AE2-R | SSM3K03FE | 2N5903 | CS3410BR | SQM120P04-04L | AP4506GEM | MCG10P03-TP

 

 
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