IRFIZ34G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFIZ34G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFIZ34G MOSFET
- Selecciónⓘ de transistores por parámetros
IRFIZ34G datasheet
..1. Size:2985K international rectifier
irfiz34g irfiz34gpbf.pdf 
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T
..2. Size:1301K international rectifier
irfiz34gpbf.pdf
PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number 91188 www.vishay.com 1 IRFIZ34GPbF Document Number 91188 www.vishay.com 2 IRFIZ34GPbF Document Number 91188 www.vishay.com 3 IRFIZ34GPbF Document Number 91188 www.vishay.com 4 IRFIZ34GPbF Document Number 91188 www.vishay.com 5 IRFIZ34GPbF Document Number 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full
..4. Size:2984K vishay
irfiz34g sihfiz34g.pdf
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T
..5. Size:275K inchange semiconductor
irfiz34g.pdf
iscN-Channel MOSFET Transistor IRFIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
7.3. Size:114K international rectifier
irfiz34e.pdf
PD - 9.1674A IRFIZ34E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.042 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
7.4. Size:217K international rectifier
auirfiz34n.pdf
PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe
7.5. Size:105K international rectifier
irfiz34n.pdf
PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s
7.6. Size:105K international rectifier
irfiz34v.pdf
PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m G Fast Switching Fully Avalanche Rated ID = 20A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac
7.7. Size:265K international rectifier
irfiz34npbf.pdf
PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
7.8. Size:504K infineon
irfiz34npbf.pdf
IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
7.9. Size:200K inchange semiconductor
irfiz34n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... IRFNJZ48, IRFNL210BTAFP001, IRFIZ14G, IRFIZ14GPBF, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24NPBF, IRFB3607, IRFIZ34GPBF, IRFIZ34NPBF, IRFIZ44G, IRFIZ44GPBF, IRFIZ44NPBF, IRFIZ46NPBF, IRFIZ48G, IRFIZ48GPBF
