IRFB7437 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB7437

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 250 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 1095 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO220AB

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IRFB7437 datasheet

 ..1. Size:248K  international rectifier
irfb7437.pdf pdf_icon

IRFB7437

StrongIRFET IRFB7437PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications VDSS D 40V l BLDC Motor drive applications RDS(on) typ. 1.5m l Battery powered circuits l Half-bridge and full-bridge topologies max. 2.0m G l Synchronous rectifier applications ID (Silicon Limited) 250A l Resonant mode power supplies S l OR-ing and redundant power switche

 ..2. Size:248K  international rectifier
irfb7437pbf.pdf pdf_icon

IRFB7437

StrongIRFET IRFB7437PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications VDSS D 40V l BLDC Motor drive applications RDS(on) typ. 1.5m l Battery powered circuits l Half-bridge and full-bridge topologies max. 2.0m G l Synchronous rectifier applications ID (Silicon Limited) 250A l Resonant mode power supplies S l OR-ing and redundant power switche

 ..3. Size:246K  inchange semiconductor
irfb7437.pdf pdf_icon

IRFB7437

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB7437 IIRFB7437 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 7.1. Size:257K  international rectifier
irfb7434.pdf pdf_icon

IRFB7437

StrongIRFET IRFB7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications ID (Silicon Limited) 317A l Resonant mode power supplies S ID (Package Limited) 195A l OR-ing and

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