IRFB7437 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7437
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 250 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1095 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRFB7437 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFB7437 datasheet
irfb7437.pdf
StrongIRFET IRFB7437PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications VDSS D 40V l BLDC Motor drive applications RDS(on) typ. 1.5m l Battery powered circuits l Half-bridge and full-bridge topologies max. 2.0m G l Synchronous rectifier applications ID (Silicon Limited) 250A l Resonant mode power supplies S l OR-ing and redundant power switche
irfb7437pbf.pdf
StrongIRFET IRFB7437PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications VDSS D 40V l BLDC Motor drive applications RDS(on) typ. 1.5m l Battery powered circuits l Half-bridge and full-bridge topologies max. 2.0m G l Synchronous rectifier applications ID (Silicon Limited) 250A l Resonant mode power supplies S l OR-ing and redundant power switche
irfb7437.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB7437 IIRFB7437 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
irfb7434.pdf
StrongIRFET IRFB7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications ID (Silicon Limited) 317A l Resonant mode power supplies S ID (Package Limited) 195A l OR-ing and
Otros transistores... IRFIZ44NPBF, IRFIZ46NPBF, IRFIZ48G, IRFIZ48GPBF, IRFIZ48NPBF, IRFIZ48VPBF, IRFB7430, IRFB7434, IRF1407, IRFB7440, IRFB7446, IRFB7446G, IRFB7530, IRFB7534, IRFB7537, IRFB7540, IRFB7545
History: VBMB18R15S
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