IRFB7740 Todos los transistores

 

IRFB7740 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB7740
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 87 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB7740 Datasheet (PDF)

 ..1. Size:530K  international rectifier
 irfb7740.pdf pdf_icon

IRFB7740

StrongIRFET IRFB7740PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.3m Resonant mode power supplies S OR-ing and redun

 ..2. Size:245K  inchange semiconductor
 irfb7740.pdf pdf_icon

IRFB7740

isc N-Channel MOSFET Transistor IRFB7740IIRFB7740FEATURESStatic drain-source on-resistance:RDS(on) 7.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:529K  international rectifier
 irfb7746.pdf pdf_icon

IRFB7740

StrongIRFET IRFB7746PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 9.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 10.6m Resonant mode power supplies S OR-ing and red

 7.2. Size:245K  inchange semiconductor
 irfb7746.pdf pdf_icon

IRFB7740

isc N-Channel MOSFET Transistor IRFB7746IIRFB7746FEATURESStatic drain-source on-resistance:RDS(on) 10.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

MOSTRAR MÁS

Otros transistores... IRFB7530 , IRFB7534 , IRFB7537 , IRFB7540 , IRFB7545 , IRFB7546 , IRFB7730 , IRFB7734 , AON6380 , IRFB7746 , IRFB7787 , IRFB812PBF , IRFR010PBF , IRFR014PBF , IRFR020PBF , IRFR024NPBF , IRFR024PBF .

History: STS4622 | FDD20AN06A0F085 | 22N65

 

 
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