IRFB812PBF Todos los transistores

 

IRFB812PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB812PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 47 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB812PBF datasheet

 ..1. Size:254K  international rectifier
 irfb812pbf.pdf pdf_icon

IRFB812PBF

PD -97693 IRFB812PbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications 500V 1.75 75ns 3.6A Features and Benefits Fast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga

 7.1. Size:244K  inchange semiconductor
 irfb812.pdf pdf_icon

IRFB812PBF

isc N-Channel MOSFET Transistor IRFB812 IIRFB812 FEATURES Static drain-source on-resistance RDS(on) 2.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Uninterruptible power supplies Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

IRFB812PBF

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 9.2. Size:222K  international rectifier
 auirfb8405.pdf pdf_icon

IRFB812PBF

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S

MOSTRAR MÁS

Otros transistores... IRFB7540 , IRFB7545 , IRFB7546 , IRFB7730 , IRFB7734 , IRFB7740 , IRFB7746 , IRFB7787 , P60NF06 , IRFR010PBF , IRFR014PBF , IRFR020PBF , IRFR024NPBF , IRFR024PBF , IRFR1010ZPBF , IRFR1018EPBF , IRFR110PBF .

History: IRFR010PBF

 

 

 


 
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