IRFR020PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR020PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 42 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia drenaje-fuente RDS(on): 0.1 Ohm
Empaquetado / Estuche: TO252
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IRFR020PBF Datasheet (PDF)
1.1. irfr020pbf.pdf 
Size:1076K _upd
IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (Ω)VGS = 10 V 0.10 • Dynamic dV/dt Rating Qg (Max.) (nC) 25 • Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 • Available in Tape and Reel • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration
3.1. irfr020.pdf Size:1391K _international_rectifier
PD- 97064 IRFR020 HEXFET Power MOSFET Dynamic dv/dt Rating Surface Mount (IRFR020) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements D S D G D-Pak IRFR020 GDS Absolute Maximum Ratings Gate Drain Source 11/16/05 Document Number: 90335 www.vishay.com 1 IRFR020 Document Number: 90335 www.vishay.com 2 IRFR020 Document Number:
3.2. irfr020 irfu020 sihfr020 sihfu020.pdf Size:1051K _vishay
IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (?)VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple
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