IRFR13N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFR13N20DPBF Datasheet (PDF)

..1. Size:684K international rectifier
irfr13n20dpbf irfu13n20dpbf.pdf pdf_icon

PD-95354ASMPS MOSFETIRFR13N20DPbFIRFU13N20DPbF Lead-Freewww.irf.com 11/17/05IRFR/U13N20DPbF2 www.irf.comIRFR/U13N20DPbFwww.irf.com 3IRFR/U13N20DPbF4 www.irf.comIRFR/U13N20DPbFwww.irf.com 5IRFR/U13N20DPbF6 www.irf.comIRFR/U13N20DPbFwww.irf.com 7IRFR/U13N20DPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (T

4.1. Size:181K international rectifier
irfr13n20d.pdf pdf_icon

PD- 93814AIRFR13N20DSMPS MOSFET IRFU13N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.235 13ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pak Fully Characterized Avalanche VoltageIRFR13N20D IRF

4.2. Size:2455K cn vbsemi
irfr13n20dtr.pdf pdf_icon

IRFR13N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

4.3. Size:242K inchange semiconductor
irfr13n20d.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20DFEATURESStatic drain-source on-resistance:RDS(on)235mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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