IRFR13N20DPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR13N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.235 Ohm

Encapsulados: TO252

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IRFR13N20DPBF datasheet

 ..1. Size:684K  international rectifier
 irfr13n20dpbf irfu13n20dpbf.pdf pdf_icon

IRFR13N20DPBF

PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T

 4.1. Size:181K  international rectifier
 irfr13n20d.pdf pdf_icon

IRFR13N20DPBF

PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRF

 4.2. Size:2455K  cn vbsemi
 irfr13n20dtr.pdf pdf_icon

IRFR13N20DPBF

IRFR13N20DTR www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RA

 4.3. Size:242K  inchange semiconductor
 irfr13n20d.pdf pdf_icon

IRFR13N20DPBF

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D FEATURES Static drain-source on-resistance RDS(on) 235m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

MOSTRAR MÁS

Otros transistores... IRFR1205PBF, IRFR120ATM, IRFR120NPBF, IRFR120PBF, IRFR120ZPBF, IRFR12N25DPBF, IRFR130ATM, IRFR13N15DPBF, MMIS60R580P, IRFP044NPBF, IRFP044PBF, IRFP048NPBF, IRFP048PBF, IRFP048R, IRFP054NPBF, IRFP054PBF, IRFP064NPBF