IRFP044NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP044NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 53 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET IRFP044NPBF

IRFP044NPBF Datasheet (PDF)

..1. Size:1541K international rectifier
irfp044npbf.pdf

PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

..2. Size:1541K infineon
irfp044npbf.pdf

6.1. Size:105K international rectifier
irfp044n.pdf

PD - 9.1410AIRFP044NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.020 Fully Avalanche RatedGID = 53ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This bene

6.2. Size:241K inchange semiconductor
irfp044n.pdf

isc N-Channel MOSFET Transistor IRFP044NIIRFP044NFEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

7.1. Size:1782K international rectifier
irfp044pbf.pdf

PD- 95669IRFP044PbF Lead-Free8/2/04Document Number: 91197 www.vishay.com1IRFP044PbFDocument Number: 91197 www.vishay.com2IRFP044PbFDocument Number: 91197 www.vishay.com3IRFP044PbFDocument Number: 91197 www.vishay.com4IRFP044PbFDocument Number: 91197 www.vishay.com5IRFP044PbFDocument Number: 91197 www.vishay.com6IRFP044PbFPeak Diode Recovery d

7.2. Size:170K international rectifier
irfp044.pdf

7.3. Size:1977K vishay
irfp044pbf.pdf

IRFP044, SiHFP044Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.028RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 95 Fast SwitchingQgs (nC) 27 Ease of ParallelingQgd (nC) 46 Simple Drive RequirementsConfiguration Single Lead

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFP250A | IXTX600N04T2

Liste

Recientemente añadidas las descripciónes de los transistores: