IRFP044PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP044PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 95 nC
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO247

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IRFP044PBF Datasheet (PDF)

..1. Size:1782K international rectifier
irfp044pbf.pdf

PD- 95669IRFP044PbF Lead-Free8/2/04Document Number: 91197 www.vishay.com1IRFP044PbFDocument Number: 91197 www.vishay.com2IRFP044PbFDocument Number: 91197 www.vishay.com3IRFP044PbFDocument Number: 91197 www.vishay.com4IRFP044PbFDocument Number: 91197 www.vishay.com5IRFP044PbFDocument Number: 91197 www.vishay.com6IRFP044PbFPeak Diode Recovery d

..2. Size:1977K vishay
irfp044pbf.pdf

IRFP044, SiHFP044Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.028RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 95 Fast SwitchingQgs (nC) 27 Ease of ParallelingQgd (nC) 46 Simple Drive RequirementsConfiguration Single Lead

7.1. Size:1541K international rectifier
irfp044npbf.pdf

PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

7.2. Size:170K international rectifier
irfp044.pdf

7.3. Size:105K international rectifier
irfp044n.pdf

PD - 9.1410AIRFP044NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.020 Fully Avalanche RatedGID = 53ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This bene

7.4. Size:1541K infineon
irfp044npbf.pdf

7.5. Size:241K inchange semiconductor
irfp044n.pdf

isc N-Channel MOSFET Transistor IRFP044NIIRFP044NFEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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