IRFP17N50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94322IRFP17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)RDS(on) typ. Trr typ. IDVDSS Zero Voltage Switching (ZVS) and High500V 0.28 170ns 16AFrequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D

PD - 95662IRFP17N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies500V 0.28 170ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg

iscN-Channel MOSFET Transistor IRFP17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

PD - 94351IRFP17N50LSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully

PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

PD - 97724AUTOMOTIVE GRADEAUIRFP1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) typ.4.2ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)160Al Repetitive Avalanche AllowedSID (Package Limited)95Aup to Tjmaxl Lead-Free, R

PD - 95517SMPS MOSFETIRFP15N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

PD - 94459AIRFP150VHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 24mGl Fast Switchingl Fully Avalanche RatedID = 47ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-re

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

PD- 95424IRFP140PbF Lead-Freewww.irf.com 106/17/04IRFP140PbF2 www.irf.comIRFP140PbFwww.irf.com 3IRFP140PbF4 www.irf.comIRFP140PbFwww.irf.com 5IRFP140PbF6 www.irf.comIRFP140PbFwww.irf.com 7IRFP140PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY PA

PD - 95003IRFP150PbF Lead-Free2/11/04Document Number: 91203 www.vishay.com1IRFP150PbFDocument Number: 91203 www.vishay.com2IRFP150PbFDocument Number: 91203 www.vishay.com3IRFP150PbFDocument Number: 91203 www.vishay.com4IRFP150PbFDocument Number: 91203 www.vishay.com5IRFP150PbFDocument Number: 91203 www.vishay.com6IRFP150PbFTO-247AC Package Ou

PD - 91343BIRFP140NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.052 Fully Avalanche RatedGID = 33ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thi

PD - 94415ASMPS MOSFETIRFP15N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c

IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. Source

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) : 0.032 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum R

IRFP150, SiHFP150Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 0.055 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140 175 C Operating TemperatureCOMPLIANTQgs (nC) 29 Fast SwitchingQgd (nC) 68 Ease of ParallelingConfiguration Single S

IRFP15N60L, SiHFP15N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS* Lower Gate Charge Results in Simple DriveQg (Max.) (nC) 100COMPLIANTRequirementsQgs (nC) 30Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

IRFP140, SiHFP140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 72 COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Sim

PD - 95003IRFP150PbF Lead-Freewww.irf.com 12/11/04IRFP150PbF2 www.irf.comIRFP150PbFwww.irf.com 3IRFP150PbF4 www.irf.comIRFP150PbFwww.irf.com 5IRFP150PbF6 www.irf.comIRFP150PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

PD- 95711IRFP140NPbF Lead-Freewww.irf.com 18/2/04IRFP140NPbF2 www.irf.comIRFP140NPbFwww.irf.com 3IRFP140NPbF4 www.irf.comIRFP140NPbFwww.irf.com 5IRFP140NPbF6 www.irf.comIRFP140NPbFwww.irf.com 7IRFP140NPbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

IRFP140Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.035 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-247ACGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RAT

isc N-Channel MOSFET Transistor IRFP1405IIRFP1405FEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP150AFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)Fast Switching100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode

iscN-Channel MOSFET Transistor IRFP140FEATURESLow drain-source on-resistance:RDS(ON) 77m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

iscN-Channel MOSFET Transistor IRFP150FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFP140NIIRFP140NFEATURESStatic drain-source on-resistance:RDS(on)52mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor IRFP150MIIRFP150MFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor contro