IRFP21N60L Todos los transistores

 ..1. Size:251K  international rectifier
 irfp21n60lpbf.pdf

PD - 95478 SMPS MOSFET IRFP21N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m 160ns 21A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 ..2. Size:163K  international rectifier
 irfp21n60l.pdf

PD - 94503 SMPS MOSFET IRFP21N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m 160ns 21A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate ch

 ..3. Size:194K  vishay
 irfp21n60l irfp21n60lpbf sihfp21n60l.pdf

IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.27 Lower Gate Charge Results in Simple Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 46 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd

 ..4. Size:400K  inchange semiconductor
 irfp21n60l.pdf

iscN-Channel MOSFET Transistor IRFP21N60L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.1. Size:888K  international rectifier
 irfp264.pdf

PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number 91217 www.vishay.com 1 IRFP264PbF Document Number 91217 www.vishay.com 2 IRFP264PbF Document Number 91217 www.vishay.com 3 IRFP264PbF Document Number 91217 www.vishay.com 4 IRFP264PbF Document Number 91217 www.vishay.com 5 IRFP264PbF Document Number 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package O

 9.2. Size:1950K  international rectifier
 irfp254pbf.pdf

PD - 95009 IRFP254PbF Lead-Free 2/12/04 Document Number 91214 www.vishay.com 1 IRFP254PbF Document Number 91214 www.vishay.com 2 IRFP254PbF Document Number 91214 www.vishay.com 3 IRFP254PbF Document Number 91214 www.vishay.com 4 IRFP254PbF Document Number 91214 www.vishay.com 5 IRFP254PbF Document Number 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Ou

 9.3. Size:501K  international rectifier
 irfp250 irfp251 irfp252 irfp253.pdf

 9.4. Size:103K  international rectifier
 irfp22n50a.pdf

PD- 91833C SMPS MOSFET IRFP22N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren

 9.5. Size:873K  international rectifier
 irfp240 irfp240pbf.pdf

PD - 95006 IRFP240PbF Lead-Free 2/11/04 Document Number 91210 www.vishay.com 1 IRP240PbF www.vishay.com Document Number 91210 2 IRFP240PbF Document Number 91210 www.vishay.com 3 IRP240PbF Document Number 91210 www.vishay.com 4 IRFP240PbF Document Number 91210 www.vishay.com 5 IRP240PbF Document Number 91210 www.vishay.com 6 IRFP240PbF TO-247AC Package Outl

 9.6. Size:180K  international rectifier
 irfp250npbf.pdf

PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 9.7. Size:147K  international rectifier
 irfp2410.pdf

Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175 C Operating Temperature RDS(on) = 0.025 Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 9.8. Size:158K  international rectifier
 irfp264npbf.pdf

PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

 9.9. Size:164K  international rectifier
 irfp250.pdf

 9.10. Size:222K  international rectifier
 irfp264n.pdf

PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 9.11. Size:122K  international rectifier
 irfp250n.pdf

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 9.12. Size:104K  international rectifier
 irfp23n50l.pdf

PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS) 500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

 9.13. Size:895K  international rectifier
 irfp264pbf.pdf

PD - 94900 IRFP264PbF Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

 9.14. Size:180K  international rectifier
 irfp260npbf.pdf

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 9.15. Size:286K  international rectifier
 auirfp2907z.pdf

PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V(BR)DSS 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 4.5m G 175 C Operating Temperature Fast Switching ID 170A S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for

 9.16. Size:162K  international rectifier
 irfp254.pdf

 9.17. Size:490K  international rectifier
 irfp240 irfp241 irfp242 irfp243.pdf

 9.18. Size:115K  international rectifier
 irfp2907.pdf

PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications D Integrated Starter Alternator VDSS = 75V 42 Volts Automotive Electrical Systems Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance ID = 209AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Descript

 9.19. Size:192K  international rectifier
 irfp254 irfp255 irfp256 irfp257.pdf

 9.20. Size:122K  international rectifier
 irfp260n.pdf

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 9.21. Size:1340K  international rectifier
 irfp260pbf.pdf

PD- 95915 IRFP260PbF Lead-Free 9/27/04 Document Number 91215 www.vishay.com 1 IRFP260PbF Document Number 91215 www.vishay.com 2 IRFP260PbF Document Number 91215 www.vishay.com 3 IRFP260PbF Document Number 91215 www.vishay.com 4 IRFP260PbF Document Number 91215 www.vishay.com 5 IRFP260PbF Document Number 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery

 9.22. Size:221K  international rectifier
 auirfp2907.pdf

PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 3.6m l Dynamic dV/dT Rating l 175 C Operating Temperature max 4.5m G l Fast Switching ID (Silicon Limited) 209A l Fully Avalanche Rated S ID (Package Limited) 90A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, R

 9.23. Size:222K  international rectifier
 irfp254n.pdf

PD - 94213 IRFP254N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 125m Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 9.24. Size:276K  international rectifier
 irfp2907zpbf.pdf

PD - 95480B IRFP2907ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 90A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistan

 9.25. Size:636K  international rectifier
 irfp250mpbf.pdf

PD - 96292 IRFP250MPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 9.26. Size:207K  international rectifier
 auirfp2602.pdf

PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description

 9.27. Size:3344K  international rectifier
 irfp250pbf.pdf

PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

 9.28. Size:91K  international rectifier
 irfp27n60k.pdf

PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Char

 9.29. Size:615K  international rectifier
 irfp27n60kpbf.pdf

PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt

 9.30. Size:168K  international rectifier
 irfp260.pdf

 9.31. Size:189K  international rectifier
 irfp254npbf.pdf

PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175 C Operating Temperature l Fast Switching RDS(on) = 125m l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 9.32. Size:218K  international rectifier
 irfp2907pbf.pdf

PD -95050C IRFP2907PbF HEXFET Power MOSFET Typical Applications D Telecom applications requiring soft start VDSS = 75V Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance Dynamic dv/dt Rating ID = 209A S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design

 9.33. Size:167K  international rectifier
 irfp244.pdf

 9.34. Size:206K  international rectifier
 irfp22n50apbf.pdf

PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

 9.35. Size:219K  international rectifier
 irfp22n60c3pbf.pdf

PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy

 9.36. Size:634K  international rectifier
 irfp260mpbf.pdf

PD - 96293 IRFP260MPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 9.37. Size:123K  international rectifier
 irfp22n60k.pdf

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Full

 9.38. Size:240K  international rectifier
 irfp244pbf.pdf

PD - 95313 IRFP244PbF Lead-Free 6/1/04 Document Number 91211 www.vishay.com 1 IRFP244PbF Document Number 91211 www.vishay.com 2 IRFP244PbF Document Number 91211 www.vishay.com 3 IRFP244PbF Document Number 91211 www.vishay.com 4 IRFP244PbF Document Number 91211 www.vishay.com 5 IRFP244PbF Document Number 91211 www.vishay.com 6 IRFP244PbF TO-247AC Package Out

 9.39. Size:271K  st
 irfp250.pdf

IRFP250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V

 9.40. Size:277K  st
 irfp240 irfp240fi.pdf

 9.41. Size:670K  fairchild semi
 irfp254b.pdf

November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s

 9.42. Size:933K  samsung
 irfp240a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.43. Size:186K  samsung
 irfp230-233 irf630-633.pdf

 9.44. Size:926K  samsung
 irfp250a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 9.45. Size:206K  samsung
 irfp244a.pdf

 9.46. Size:948K  samsung
 irfp254a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.47. Size:179K  vishay
 irfp27n60k sihfp27n60k.pdf

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

 9.48. Size:192K  vishay
 irfp26n60l irfp26n60lpbf sihfp26n60l.pdf

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.49. Size:306K  vishay
 irfp22n50a sihfp22n50a.pdf

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

 9.50. Size:179K  vishay
 irfp22n60k sihfp22n60k.pdf

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

 9.51. Size:1541K  vishay
 irfp264 sihfp264.pdf

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl

 9.52. Size:177K  vishay
 irfp22n60k irfp22n60kpbf sihfp22n60k.pdf

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

 9.53. Size:128K  vishay
 irfp264npbf.pdf

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.060 175 C Operating Temperature RoHS* Qg (Max.) (nC) 210 Fast Switching COMPLIANT Qgs (nC) 34 Fully Avalanche Rated Qgd (nC) 94 Ease of Paralleling Configuration Single Simple

 9.54. Size:155K  vishay
 irfp254n sihfp254n.pdf

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co

 9.55. Size:1596K  vishay
 irfp240 sihfp240.pdf

IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 70 Fast Switching Qgs (nC) 13 Ease of Paralleling Qgd (nC) 39 Simple Drive Requirements Configuration Single Compli

 9.56. Size:188K  vishay
 irfp23n50l sihfp23n50l.pdf

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.57. Size:1519K  vishay
 irfp254 sihfp254.pdf

IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.14 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 71 Simple Drive Requirements Configuration Single Complia

 9.58. Size:123K  vishay
 irfp254n irfp254npbf.pdf

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co

 9.59. Size:183K  vishay
 irfp27n60k irfp27n60kpbf sihfp27n60k.pdf

IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co

 9.60. Size:902K  vishay
 irfp244 sihfp244.pdf

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration

 9.61. Size:3344K  vishay
 irfp250pbf.pdf

PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

 9.62. Size:188K  vishay
 irfp26n60l sihfp26n60l.pdf

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.63. Size:1762K  vishay
 irfp260 sihfp260.pdf

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Comp

 9.64. Size:1453K  vishay
 irfp250 sihfp250.pdf

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compli

 9.65. Size:192K  vishay
 irfp23n50l irfp23n50lpbf sihfp23n50l.pdf

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.66. Size:311K  vishay
 irfp22n50apbf sihfp22n50a.pdf

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

 9.67. Size:907K  infineon
 irfp244 sihfp244.pdf

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration

 9.68. Size:1063K  infineon
 irfp22n50apbf.pdf

IRFP22N50APbF HEXFET Power MOSFET Applications D V 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply R DS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) S D Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully

 9.69. Size:188K  harris semi
 irfp250r irfp252r.pdf

 9.70. Size:72K  harris semi
 irfp244-247.pdf

IRFP244, IRFP245, Semiconductor IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, July 1998 N-Channel Power MOSFETs Features Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34 MOSFETs designed, tested, and guaranteed to withstand a specified

 9.71. Size:192K  no
 irfp254-257.pdf

 9.72. Size:596K  cn minos
 irfp250n.pdf

200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology

 9.73. Size:594K  cn minos
 irfp260n.pdf

Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R

 9.74. Size:399K  inchange semiconductor
 irfp264.pdf

iscN-Channel MOSFET Transistor IRFP264 FEATURES Low drain-source on-resistance RDS(ON) 75m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.75. Size:400K  inchange semiconductor
 irfp22n50a.pdf

iscN-Channel MOSFET Transistor IRFP22N50A FEATURES Low drain-source on-resistance RDS(ON) =0.23 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.76. Size:236K  inchange semiconductor
 irfp252.pdf

isc N-Channel MOSFET Transistor IRFP252 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.77. Size:236K  inchange semiconductor
 irfp255.pdf

isc N-Channel MOSFET Transistor IRFP255 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.78. Size:260K  inchange semiconductor
 irfp250npbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.79. Size:62K  inchange semiconductor
 irfp242r.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.22 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 9.80. Size:241K  inchange semiconductor
 irfp250m.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250M IIRFP250M FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.81. Size:400K  inchange semiconductor
 irfp250.pdf

iscN-Channel MOSFET Transistor IRFP250 FEATURES Low drain-source on-resistance RDS(ON) 85m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.82. Size:236K  inchange semiconductor
 irfp256.pdf

isc N-Channel MOSFET Transistor IRFP256 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.83. Size:241K  inchange semiconductor
 irfp250n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.84. Size:247K  inchange semiconductor
 irfp260m.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260M IIRFP260M FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr

 9.85. Size:400K  inchange semiconductor
 irfp23n50l.pdf

iscN-Channel MOSFET Transistor IRFP23N50L FEATURES Low drain-source on-resistance RDS(ON) =0.235 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 9.86. Size:212K  inchange semiconductor
 irfp260npbf.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.87. Size:236K  inchange semiconductor
 irfp254a.pdf

isc N-Channel MOSFET Transistor IRFP254A FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.88. Size:236K  inchange semiconductor
 irfp254.pdf

isc N-Channel MOSFET Transistor IRFP254 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.89. Size:242K  inchange semiconductor
 irfp2907z.pdf

isc N-Channel MOSFET Transistor IRFP2907Z IIRFP2907Z FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

 9.90. Size:241K  inchange semiconductor
 irfp2907.pdf

isc N-Channel MOSFET Transistor IRFP2907 IIRFP2907 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 9.91. Size:236K  inchange semiconductor
 irfp253.pdf

isc N-Channel MOSFET Transistor IRFP253 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.92. Size:242K  inchange semiconductor
 irfp260n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N IIRFP260N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.93. Size:401K  inchange semiconductor
 irfp27n60k.pdf

iscN-Channel MOSFET Transistor IRFP27N60K FEATURES Low drain-source on-resistance RDS(ON) =0.22 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.94. Size:399K  inchange semiconductor
 irfp260.pdf

iscN-Channel MOSFET Transistor IRFP260 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.95. Size:62K  inchange semiconductor
 irfp240r.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 9.96. Size:400K  inchange semiconductor
 irfp26n60l.pdf

iscN-Channel MOSFET Transistor IRFP26N60L FEATURES Low drain-source on-resistance RDS(ON) =0.25 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.97. Size:401K  inchange semiconductor
 irfp22n60k.pdf

iscN-Channel MOSFET Transistor IRFP22N60K FEATURES Low drain-source on-resistance RDS(ON) =0.28 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.98. Size:236K  inchange semiconductor
 irfp257.pdf

isc N-Channel MOSFET Transistor IRFP257 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies