IRFP23N50L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP23N50L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 94 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.235 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP23N50L MOSFET
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IRFP23N50L datasheet
irfp23n50l.pdf
PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS) 500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and
irfp23n50l sihfp23n50l.pdf
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp23n50l irfp23n50lpbf sihfp23n50l.pdf
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp23n50l.pdf
iscN-Channel MOSFET Transistor IRFP23N50L FEATURES Low drain-source on-resistance RDS(ON) =0.235 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
irfp264.pdf
PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number 91217 www.vishay.com 1 IRFP264PbF Document Number 91217 www.vishay.com 2 IRFP264PbF Document Number 91217 www.vishay.com 3 IRFP264PbF Document Number 91217 www.vishay.com 4 IRFP264PbF Document Number 91217 www.vishay.com 5 IRFP264PbF Document Number 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package O
irfp254pbf.pdf
PD - 95009 IRFP254PbF Lead-Free 2/12/04 Document Number 91214 www.vishay.com 1 IRFP254PbF Document Number 91214 www.vishay.com 2 IRFP254PbF Document Number 91214 www.vishay.com 3 IRFP254PbF Document Number 91214 www.vishay.com 4 IRFP254PbF Document Number 91214 www.vishay.com 5 IRFP254PbF Document Number 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Ou
irfp22n50a.pdf
PD- 91833C SMPS MOSFET IRFP22N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren
irfp240 irfp240pbf.pdf
PD - 95006 IRFP240PbF Lead-Free 2/11/04 Document Number 91210 www.vishay.com 1 IRP240PbF www.vishay.com Document Number 91210 2 IRFP240PbF Document Number 91210 www.vishay.com 3 IRP240PbF Document Number 91210 www.vishay.com 4 IRFP240PbF Document Number 91210 www.vishay.com 5 IRP240PbF Document Number 91210 www.vishay.com 6 IRFP240PbF TO-247AC Package Outl
irfp250npbf.pdf
PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni
irfp2410.pdf
Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175 C Operating Temperature RDS(on) = 0.025 Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi
irfp264npbf.pdf
PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi
irfp264n.pdf
PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
irfp250n.pdf
PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
irfp264pbf.pdf
PD - 94900 IRFP264PbF Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2
irfp260npbf.pdf
PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni
auirfp2907z.pdf
PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V(BR)DSS 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 4.5m G 175 C Operating Temperature Fast Switching ID 170A S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for
irfp2907.pdf
PD -93906A IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications D Integrated Starter Alternator VDSS = 75V 42 Volts Automotive Electrical Systems Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance ID = 209AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Descript
irfp21n60lpbf.pdf
PD - 95478 SMPS MOSFET IRFP21N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m 160ns 21A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.
irfp260n.pdf
PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
irfp260pbf.pdf
PD- 95915 IRFP260PbF Lead-Free 9/27/04 Document Number 91215 www.vishay.com 1 IRFP260PbF Document Number 91215 www.vishay.com 2 IRFP260PbF Document Number 91215 www.vishay.com 3 IRFP260PbF Document Number 91215 www.vishay.com 4 IRFP260PbF Document Number 91215 www.vishay.com 5 IRFP260PbF Document Number 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery
auirfp2907.pdf
PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 3.6m l Dynamic dV/dT Rating l 175 C Operating Temperature max 4.5m G l Fast Switching ID (Silicon Limited) 209A l Fully Avalanche Rated S ID (Package Limited) 90A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, R
irfp254n.pdf
PD - 94213 IRFP254N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 125m Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely
irfp2907zpbf.pdf
PD - 95480B IRFP2907ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5m G l Lead-Free ID = 90A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistan
irfp250mpbf.pdf
PD - 96292 IRFP250MPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq
auirfp2602.pdf
PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description
irfp250pbf.pdf
PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.
irfp27n60k.pdf
PD - 94407 SMPS MOSFET IRFP27N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 180m 27A High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Char
irfp27n60kpbf.pdf
PD - 95479A SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 600V 180m 27A l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt
irfp254npbf.pdf
PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175 C Operating Temperature l Fast Switching RDS(on) = 125m l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques
irfp21n60l.pdf
PD - 94503 SMPS MOSFET IRFP21N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m 160ns 21A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate ch
irfp2907pbf.pdf
PD -95050C IRFP2907PbF HEXFET Power MOSFET Typical Applications D Telecom applications requiring soft start VDSS = 75V Benefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-Resistance Dynamic dv/dt Rating ID = 209A S 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design
irfp22n50apbf.pdf
PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan
irfp22n60c3pbf.pdf
PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy
irfp260mpbf.pdf
PD - 96293 IRFP260MPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq
irfp22n60k.pdf
PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Full
irfp244pbf.pdf
PD - 95313 IRFP244PbF Lead-Free 6/1/04 Document Number 91211 www.vishay.com 1 IRFP244PbF Document Number 91211 www.vishay.com 2 IRFP244PbF Document Number 91211 www.vishay.com 3 IRFP244PbF Document Number 91211 www.vishay.com 4 IRFP244PbF Document Number 91211 www.vishay.com 5 IRFP244PbF Document Number 91211 www.vishay.com 6 IRFP244PbF TO-247AC Package Out
irfp250.pdf
IRFP250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V
irfp254b.pdf
November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s
irfp240a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
irfp250a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
irfp254a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
irfp27n60k sihfp27n60k.pdf
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp21n60l irfp21n60lpbf sihfp21n60l.pdf
IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.27 Lower Gate Charge Results in Simple Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 46 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd
irfp22n50a sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con
irfp22n60k sihfp22n60k.pdf
IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co
irfp264 sihfp264.pdf
IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf
IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co
irfp264npbf.pdf
IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.060 175 C Operating Temperature RoHS* Qg (Max.) (nC) 210 Fast Switching COMPLIANT Qgs (nC) 34 Fully Avalanche Rated Qgd (nC) 94 Ease of Paralleling Configuration Single Simple
irfp254n sihfp254n.pdf
IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co
irfp240 sihfp240.pdf
IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 70 Fast Switching Qgs (nC) 13 Ease of Paralleling Qgd (nC) 39 Simple Drive Requirements Configuration Single Compli
irfp254 sihfp254.pdf
IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.14 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 71 Simple Drive Requirements Configuration Single Complia
irfp254n irfp254npbf.pdf
IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Co
irfp27n60k irfp27n60kpbf sihfp27n60k.pdf
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.18 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 56 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 86 and Current Co
irfp244 sihfp244.pdf
IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration
irfp250pbf.pdf
PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.
irfp26n60l sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp260 sihfp260.pdf
IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Comp
irfp250 sihfp250.pdf
IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compli
irfp22n50apbf sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con
irfp244 sihfp244.pdf
IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration
irfp22n50apbf.pdf
IRFP22N50APbF HEXFET Power MOSFET Applications D V 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply R DS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) S D Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully
irfp244-247.pdf
IRFP244, IRFP245, Semiconductor IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, July 1998 N-Channel Power MOSFETs Features Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34 MOSFETs designed, tested, and guaranteed to withstand a specified
irfp250n.pdf
200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology
irfp260n.pdf
Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R
irfp264.pdf
iscN-Channel MOSFET Transistor IRFP264 FEATURES Low drain-source on-resistance RDS(ON) 75m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfp22n50a.pdf
iscN-Channel MOSFET Transistor IRFP22N50A FEATURES Low drain-source on-resistance RDS(ON) =0.23 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp252.pdf
isc N-Channel MOSFET Transistor IRFP252 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp255.pdf
isc N-Channel MOSFET Transistor IRFP255 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp250npbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
irfp242r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.22 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp250m.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250M IIRFP250M FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
irfp250.pdf
iscN-Channel MOSFET Transistor IRFP250 FEATURES Low drain-source on-resistance RDS(ON) 85m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfp256.pdf
isc N-Channel MOSFET Transistor IRFP256 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp250n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
irfp260m.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260M IIRFP260M FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr
irfp260npbf.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
irfp254a.pdf
isc N-Channel MOSFET Transistor IRFP254A FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp254.pdf
isc N-Channel MOSFET Transistor IRFP254 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp2907z.pdf
isc N-Channel MOSFET Transistor IRFP2907Z IIRFP2907Z FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-
irfp2907.pdf
isc N-Channel MOSFET Transistor IRFP2907 IIRFP2907 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour
irfp253.pdf
isc N-Channel MOSFET Transistor IRFP253 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
irfp260n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N IIRFP260N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp27n60k.pdf
iscN-Channel MOSFET Transistor IRFP27N60K FEATURES Low drain-source on-resistance RDS(ON) =0.22 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp260.pdf
iscN-Channel MOSFET Transistor IRFP260 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfp240r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp21n60l.pdf
iscN-Channel MOSFET Transistor IRFP21N60L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp26n60l.pdf
iscN-Channel MOSFET Transistor IRFP26N60L FEATURES Low drain-source on-resistance RDS(ON) =0.25 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp22n60k.pdf
iscN-Channel MOSFET Transistor IRFP22N60K FEATURES Low drain-source on-resistance RDS(ON) =0.28 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfp257.pdf
isc N-Channel MOSFET Transistor IRFP257 FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 275V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
Otros transistores... IRFP17N50L, IRFP17N50LPBF, IRFP21N60L, IRFP21N60LPBF, IRFP22N50APBF, IRFP22N60C3PBF, IRFP22N60K, IRFP22N60KPBF, IRF3710, IRFP23N50LPBF, IRFP240PBF, IRFP240R, IRFP242R, IRFP244PBF, IRFP250MPBF, IRFP250NPBF, IRFP250PBF
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