IRFP260MPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP260MPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 603 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO247AC

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IRFP260MPBF datasheet

 ..1. Size:634K  international rectifier
 irfp260mpbf.pdf pdf_icon

IRFP260MPBF

PD - 96293 IRFP260MPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 6.1. Size:247K  inchange semiconductor
 irfp260m.pdf pdf_icon

IRFP260MPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260M IIRFP260M FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr

 7.1. Size:180K  international rectifier
 irfp260npbf.pdf pdf_icon

IRFP260MPBF

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 7.2. Size:122K  international rectifier
 irfp260n.pdf pdf_icon

IRFP260MPBF

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

MOSTRAR MÁS

Otros transistores... IRFP250MPBF, IRFP250NPBF, IRFP250PBF, IRFP250R, IRFP252R, IRFP254N, IRFP254NPBF, IRFP254PBF, 2N7002, IRFP260NPBF, IRFP260PBF, IRFP264NPBF, IRFP264PBF, IRFP26N60L, IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF