IRFP230 Todos los transistores

 

IRFP230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP230
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50(max) nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET IRFP230

 

IRFP230 Datasheet (PDF)

 0.1. Size:186K  samsung
irfp230-233 irf630-633.pdf

IRFP230
IRFP230

 8.1. Size:104K  international rectifier
irfp23n50l.pdf

IRFP230
IRFP230

PD - 94230SMPS MOSFETIRFP23N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS)500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

 8.2. Size:188K  vishay
irfp23n50l sihfp23n50l.pdf

IRFP230
IRFP230

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.3. Size:192K  vishay
irfp23n50l irfp23n50lpbf sihfp23n50l.pdf

IRFP230
IRFP230

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.4. Size:400K  inchange semiconductor
irfp23n50l.pdf

IRFP230
IRFP230

iscN-Channel MOSFET Transistor IRFP23N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.235 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Otros transistores... IRFP150 , IRFP150A , IRFP150FI , IRFP150N , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , 5N50 , IRFP231 , IRFP232 , IRFP233 , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI , IRFP241 .

 

 
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