IXTT1N250HV Todos los transistores

 

IXTT1N250HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT1N250HV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 2500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 77 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
   Paquete / Cubierta: TO-268S
 

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IXTT1N250HV Datasheet (PDF)

 ..1. Size:152K  ixys
 ixtt1n250hv.pdf pdf_icon

IXTT1N250HV

Advance Technical InformationHigh Voltage VDSS = 2500VIXTT1N250HVID25 = 1.5APower MOSFET RDS(on) 40 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainS = Source Tab = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Contin

 8.1. Size:155K  ixys
 ixtt1n450hv.pdf pdf_icon

IXTT1N250HV

Advance Technical InformationHigh Voltage VDSS = 4500VIXTT1N450HVPower MOSFETID25 = 1A RDS(on) 85 N-Channel Enhancement ModeTO-268 (IXTT)GSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VG = Gate D = DrainS = Source Tab = DrainVGSS Continuous 20 VVGSM

 8.2. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf pdf_icon

IXTT1N250HV

Advance Technical InformationVDSS = 1000 VIXTH 1N100High Voltage MOSFETID25 = 1.5 AIXTT 1N100 RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC

 8.3. Size:208K  ixys
 ixth1n300p3hv ixtt1n300p3hv.pdf pdf_icon

IXTT1N250HV

Preliminary Technical InformationHigh Voltage VDSS = 3000VIXTT1N300P3HVPower MOSFETID25 = 1.00AIXTH1N300P3HV RDS(on) 50 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VTO-247HV (IXTH)VDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS

MOSTRAR MÁS

Otros transistores... IXTV230N085TS , IXTT6N150 , IXTT4N150HV , IXTT3N200P3HV , IXTT2N300P3HV , IXTT2N170D2 , IXTT1N450HV , IXTT1N300P3HV , AON7403 , IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , IXTR210P10T , IXTR140P10T , IXTR120P20T .

History: 2SK1401A | DM8N65C-F | IPAW70R950CE

 

 
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