IXTP270N04T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationVDSS = 40VTrenchT4TMIXTA270N04T4ID25 = 270APower MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGDD (Tab)SVDGR TJ = 25C to 175C, RG

Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

Preliminary Technical InformationIXTA220N075T VDSS = 75 VTrenchMVTMIXTP220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2

Preliminary Technical InformationX-Class VDSS = 650VIXTP20N65XMPower MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDSVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = So

IXTP 2R4N50P VDSS = 500 VPolarHVTMIXTY 2R4N50P ID25 = 2.4 APower MOSFET RDS(on) 3.75 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGSM Transient 40 V(TAB)GVGSM Continuous 30 V DSID25 TC = 25C 2.4 A

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

Preliminary Technical InformationVDSS = 40VTrenchT4TMIXTP230N04T4MID25 = 230APower MOSFET RDS(on) 2.9m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDTO-220Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGIsolated TabDSVDGR TJ = 25C to 175C, RGS = 1M 40 VVG

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 55 V S (TAB) VDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 260 AILRM

VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 A

Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

Preliminary Technical InformationIXTA240N055T VDSS = 55 VTrenchMVTMIXTP240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2

High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by

Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175

TrenchT2TM VDSS = 75VIXTA230N075T2ID25 = 230APower MOSFETIXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement ModeAvalanche Rated TO-263 (IXTA)GSD (Tab)TO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Transient 20 VGDSID25 TC = 25C 2

Advance Technical InformationX2-Class VDSS = 650VIXTP24N65X2MPower MOSFET ID25 = 8.5A RDS(on) 145m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGDSVGSS Continuous 30 VVGSM Transient

Preliminary Technical InformationX2-Class VDSS = 650VIXTY2N65X2Power MOSFET ID25 = 2AIXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

isc P-Channel MOSFET Transistor IXTP26P10TFEATURESStatic drain-source on-resistance:RDS(on)90mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh side switchingPush pull amplifiersCurrent regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor IXTP230N04T4FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO