IRFP242 Todos los transistores

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.22 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

PD - 95006 IRFP240PbF Lead-Free 2/11/04 Document Number 91210 www.vishay.com 1 IRP240PbF www.vishay.com Document Number 91210 2 IRFP240PbF Document Number 91210 www.vishay.com 3 IRP240PbF Document Number 91210 www.vishay.com 4 IRFP240PbF Document Number 91210 www.vishay.com 5 IRP240PbF Document Number 91210 www.vishay.com 6 IRFP240PbF TO-247AC Package Outl

Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175 C Operating Temperature RDS(on) = 0.025 Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

PD - 95313 IRFP244PbF Lead-Free 6/1/04 Document Number 91211 www.vishay.com 1 IRFP244PbF Document Number 91211 www.vishay.com 2 IRFP244PbF Document Number 91211 www.vishay.com 3 IRFP244PbF Document Number 91211 www.vishay.com 4 IRFP244PbF Document Number 91211 www.vishay.com 5 IRFP244PbF Document Number 91211 www.vishay.com 6 IRFP244PbF TO-247AC Package Out

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 70 Fast Switching Qgs (nC) 13 Ease of Paralleling Qgd (nC) 39 Simple Drive Requirements Configuration Single Compli

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration

IRFP244, IRFP245, Semiconductor IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, July 1998 N-Channel Power MOSFETs Features Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34 MOSFETs designed, tested, and guaranteed to withstand a specified

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT