IRFP243 Todos los transistores

 

IRFP243 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP243

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 150 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 51 nS

Conductancia de drenaje-sustrato (Cd): 380 pF

Resistencia drenaje-fuente RDS(on): 0.22 Ohm

Empaquetado / Estuche: TO3P

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IRFP243 Datasheet (PDF)

8.1. irfp240 irfp240fi.pdf Size:277K _st

IRFP243
IRFP243

8.2. irfp244pbf.pdf Size:240K _international_rectifier

IRFP243
IRFP243

PD - 95313IRFP244PbF Lead-Free6/1/04Document Number: 91211 www.vishay.com1IRFP244PbFDocument Number: 91211 www.vishay.com2IRFP244PbFDocument Number: 91211 www.vishay.com3IRFP244PbFDocument Number: 91211 www.vishay.com4IRFP244PbFDocument Number: 91211 www.vishay.com5IRFP244PbFDocument Number: 91211 www.vishay.com6IRFP244PbFTO-247AC Package Out

 8.3. irfp244.pdf Size:167K _international_rectifier

IRFP243
IRFP243

8.4. irfp2410.pdf Size:147K _international_rectifier

IRFP243
IRFP243

Preliminary Data Sheet PD - 9.1251IRFP2410HEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating VDSS = 100VRepetitive Avalanche Rated175C Operating TemperatureRDS(on) = 0.025Fast SwitchingEase of ParallelingID = 61ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achi

 8.5. irfp240-243.pdf Size:490K _international_rectifier

IRFP243
IRFP243

8.6. irfp240 irfp240pbf.pdf Size:873K _international_rectifier

IRFP243
IRFP243

PD - 95006IRFP240PbF Lead-Free2/11/04Document Number: 91210 www.vishay.com1IRP240PbFwww.vishay.comDocument Number: 912102IRFP240PbFDocument Number: 91210 www.vishay.com3IRP240PbFDocument Number: 91210 www.vishay.com4IRFP240PbFDocument Number: 91210 www.vishay.com5IRP240PbFDocument Number: 91210 www.vishay.com6IRFP240PbFTO-247AC Package Outl

8.7. irfp240a.pdf Size:933K _samsung

IRFP243
IRFP243

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

8.8. irfp244a.pdf Size:206K _samsung

IRFP243
IRFP243

8.9. irfp244 sihfp244.pdf Size:902K _vishay

IRFP243
IRFP243

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

8.10. irfp240 sihfp240.pdf Size:1596K _vishay

IRFP243
IRFP243

IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli

8.11. irfp244 sihfp244.pdf Size:907K _infineon

IRFP243
IRFP243

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

8.12. irfp244-247.pdf Size:72K _harris_semi

IRFP243
IRFP243

IRFP244, IRFP245,SemiconductorIRFP246, IRFP24715A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,July 1998 N-Channel Power MOSFETsFeatures Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34MOSFETs designed, tested, and guaranteed to withstand aspecified

8.13. irfp240r.pdf Size:62K _inchange_semiconductor

IRFP243
IRFP243

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

8.14. irfp242r.pdf Size:62K _inchange_semiconductor

IRFP243
IRFP243

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.22(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

Otros transistores... IRFP232 , IRFP233 , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFZ44 , IRFP244 , IRFP244A , IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 .

 

 
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