IXTM15N50A Todos los transistores

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IXTM15N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTM15N50A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 120 nC

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 290 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3

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IXTM15N50A Datasheet (PDF)

1.1. ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf Size:65K _ixys

IXTM15N50A



3.1. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

IXTM15N50A
IXTM15N50A

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

 5.1. ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf Size:98K _ixys

IXTM15N50A
IXTM15N50A

VDSS ID25 RDS(on) Ω IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω Ω Ω MegaMOSTMFET Ω IXTH / IXTM 13N80 800 V 13 A 0.80 Ω Ω Ω Ω N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 11N80 11

5.2. ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf Size:299K _ixys

IXTM15N50A
IXTM15N50A



 5.3. ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf Size:64K _ixys

IXTM15N50A

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5.4. ixth12n50a ixtm12n50a.pdf Size:62K _ixys

IXTM15N50A
IXTM15N50A

VDSS ID25 RDS(on) Standard Ω IXTH 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Power MOSFET Ω IXTM 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C12 A IDM TC

 5.5. ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf Size:105K _ixys

IXTM15N50A
IXTM15N50A

VDSS ID25 RDS(on) MegaMOSTMFET Ω Ω IXTH / IXTM 10N100 1000 V 10 A 1.20 Ω Ω Ω Ω IXTH / IXTM 12N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 10N

5.6. ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf Size:65K _ixys

IXTM15N50A



Otros transistores... IXTM3N90A , IXTM3N90 , IXTM3N80A , IXTM3N80 , IXTM2N95A , IXTM2N95 , IXTM2N100A , IXTM2N100 , IRF9640 , IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IXTM10N60A , IXTM10N60 , IXTL2X240N055T , IXTL2X220N075T .

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