IXTL2X220N075T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTL2X220N075T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: I5-PAK

 Búsqueda de reemplazo de IXTL2X220N075T MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTL2X220N075T datasheet

 ..1. Size:66K  ixys
 ixtl2x220n075t.pdf pdf_icon

IXTL2X220N075T

Advance Technical Information TrenchMVTM IXTL2x220N075T VDSS = 75 V ID25 = 2x120 A Power MOSFETs RDS(on) 5.5 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; R

 7.1. Size:66K  ixys
 ixtl2x240n055t.pdf pdf_icon

IXTL2X220N075T

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs RDS(on) 4.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RG

 7.2. Size:66K  ixys
 ixtl2x200n085t.pdf pdf_icon

IXTL2X220N075T

Advance Technical Information TrenchMVTM IXTL2x200N085T VDSS = 85 V ID25 = 2x112 A Power MOSFETs RDS(on) 6.0 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C;

 8.1. Size:66K  ixys
 ixtl2x180n10t.pdf pdf_icon

IXTL2X220N075T

Advance Technical Information TrenchMVTM IXTL2x180N10T VDSS = 100 V ID25 = 2x100 A Power MOSFETs RDS(on) 7.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG ISOPLUS i5-PakTM (IXTL) Avalanche Rated S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175

MOSTRAR MÁS

Otros transistores... IXTM15N50A, IXTM15N45A, IXTM12N50, IXTM12N45A, IXTM12N45, IXTM10N60A, IXTM10N60, IXTL2X240N055T, 75N75, IXTL2X200N085T, IXTL2X180N10T, IXTL2N450, IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IXTK102N65X2