IXTL2X180N10T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTL2X180N10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 923 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: I5-PAK

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IXTL2X180N10T datasheet

 ..1. Size:66K  ixys
 ixtl2x180n10t.pdf pdf_icon

IXTL2X180N10T

Advance Technical Information TrenchMVTM IXTL2x180N10T VDSS = 100 V ID25 = 2x100 A Power MOSFETs RDS(on) 7.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG ISOPLUS i5-PakTM (IXTL) Avalanche Rated S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175

 8.1. Size:66K  ixys
 ixtl2x240n055t.pdf pdf_icon

IXTL2X180N10T

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs RDS(on) 4.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RG

 8.2. Size:66K  ixys
 ixtl2x220n075t.pdf pdf_icon

IXTL2X180N10T

Advance Technical Information TrenchMVTM IXTL2x220N075T VDSS = 75 V ID25 = 2x120 A Power MOSFETs RDS(on) 5.5 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; R

 8.3. Size:66K  ixys
 ixtl2x200n085t.pdf pdf_icon

IXTL2X180N10T

Advance Technical Information TrenchMVTM IXTL2x200N085T VDSS = 85 V ID25 = 2x112 A Power MOSFETs RDS(on) 6.0 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C;

MOSTRAR MÁS

Otros transistores... IXTM12N50, IXTM12N45A, IXTM12N45, IXTM10N60A, IXTM10N60, IXTL2X240N055T, IXTL2X220N075T, IXTL2X200N085T, IRFB31N20D, IXTL2N450, IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IXTJ4N150