IRFP250 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFP250 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP250

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO247

Búsqueda de reemplazo de IRFP250 MOSFET

- Selecciónⓘ de transistores por parámetros

IRFP250 datasheet

..1. Size:501K international rectifier
irfp250 irfp251 irfp252 irfp253.pdf pdf_icon

..2. Size:164K international rectifier
irfp250.pdf pdf_icon

..3. Size:3344K international rectifier
irfp250pbf.pdf pdf_icon

PD - 95008 IRFP250PbF Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

..4. Size:271K st
irfp250.pdf pdf_icon

IRFP250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V

..5. Size:3344K vishay
irfp250pbf.pdf pdf_icon

..6. Size:1453K vishay
irfp250 sihfp250.pdf pdf_icon

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compli

..7. Size:400K inchange semiconductor
irfp250.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFP250 FEATURES Low drain-source on-resistance RDS(ON) 85m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

0.1. Size:180K international rectifier
irfp250npbf.pdf pdf_icon

PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

0.2. Size:122K international rectifier
irfp250n.pdf pdf_icon

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

0.3. Size:636K international rectifier
irfp250mpbf.pdf pdf_icon

PD - 96292 IRFP250MPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

0.4. Size:926K samsung
irfp250a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.071 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

0.5. Size:188K harris semi
irfp250r irfp252r.pdf pdf_icon

0.6. Size:596K cn minos
irfp250n.pdf pdf_icon

200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology

0.7. Size:260K inchange semiconductor
irfp250npbf.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

0.8. Size:241K inchange semiconductor
irfp250m.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250M IIRFP250M FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

0.9. Size:241K inchange semiconductor
irfp250n.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

Otros transistores... IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRFP244 , IRFP244A , IRFP245 , IRF640 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 .