IXTH34N65X2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationX2-Class VDSS = 650VIXTH34N65X2Power MOSFET ID25 = 34A RDS(on) 105m N-Channel Enhancement ModeAvalanche RatedTO-247GDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS = Source Tab = DrainVGSS Contin

X2-Class VDSS = 650VIXTP34N65X2Power MOSFET ID25 = 34AIXTH34N65X2 RDS(on) 96m N-Channel Enhancement ModeAvalanche RatedTO-220(IXTP)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 V DSD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 650 VTO-247VGSS Continuous 30 V(IXTH)VGSM Transient 40 VID

isc N-Channel MOSFET Transistor IXTH34N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

High Voltage VDSS = 1500VIXTH3N150ID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = Dr

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH360N055T2ID25 = 360AMOSFET IXTT360N055T2 RDS(on) 2.4m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C55 V (TAB)SVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

Preliminary Data SheetVDSS ID25 RDS(on)MegaMOSTMFETIXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement ModeIXTH 30N50 500 V 30 A 0.17 TO-247 ADSymbol Test Conditions Maximum RatingsD (TAB)30N45 450 VVDSS TJ = 25C to 150C 30N50 500 V30N45 450 VVDGR TJ = 25C to 150C; RGS = 1 M 30N50 500 VTO-247 SMD( ...S )VGS Continuous 20 VVGSM Transient 30 VID

Preliminary Technical InformationX-Class VDSS = 650VIXTP32N65XPower MOSFET ID25 = 32AIXTQ32N65X RDS(on) 135m IXTH32N65XN-Channel Enhancement ModeTO-220AB (IXTP)GD TabSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGVGSS Continuous 30 V

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

Advance Technical InformationStandard VDSS = 250 VIXTH 30N25ID (cont) = 30 APower MOSFETRDS(on) = 75 mN-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C30 AIDM TC = 25C, pulse wid

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra

Advance Technical InformationIXTH 36P10Standard Power MOSFETVDSS = -100 VID25 = -36 AP-Channel Enhancement ModeRDS(on) = 75 mAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C; RGS = 1 M -100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -36 AIDM TC

Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH30N50LFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)