IXTH2N300P3HV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH2N300P3HV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 3000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 21 Ohm

Encapsulados: TO-247HV

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IXTH2N300P3HV datasheet

 ..1. Size:202K  ixys
 ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTH2N300P3HV

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V

 8.1. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf pdf_icon

IXTH2N300P3HV

Depletion Mode VDSX = 1700V IXTT2N170D2 MOSFETs ID(on) > 2A IXTH2N170D2 RDS(on) 6.5 N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V G VGSM Transient 30 V D D (Tab) S PD TC = 25 C 568 W G = Gate

 8.2. Size:109K  ixys
 ixth2n150l.pdf pdf_icon

IXTH2N300P3HV

Advance Technical Information LinearTM Power MOSFET VDSS = 1500V IXTH2N150L ID25 = 2A w/Extended FBSOA RDS(on) 15 N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25 C to 150 C 1500 V S = Source Tab = Drain VDGR TJ = 25 C to 150 C

 8.3. Size:140K  ixys
 ixth2n150.pdf pdf_icon

IXTH2N300P3HV

Advance Technical Information High Voltage VDSS = 1500V IXTH2N150 ID25 = 2A Power MOSFET RDS(on) 9.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G

MOSTRAR MÁS

Otros transistores... IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2, IXTH48N15, IXTH3N200P3HV, IXTH34N65X2, IXTH32N65X, 20N60, IXTH2N170D2, IXTH2N150L, IXTH2N150, IXTH270N04T4, IXTH20N65X, IXTH1R8N220P3HV, IXTH1R4N250P3, IXTH1N450HV