IXTH2N170D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTH2N170D2 Datasheet (PDF)

..1. Size:172K ixys
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Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

7.1. Size:109K ixys
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Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

7.2. Size:140K ixys
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Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG

8.1. Size:202K ixys
ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

Otros transistores... IXTH52N65X , IXTH4N100L , IXTH48N65X2 , IXTH48N15 , IXTH3N200P3HV , IXTH34N65X2 , IXTH32N65X , IXTH2N300P3HV , IRF540 , IXTH2N150L , IXTH2N150 , IXTH270N04T4 , IXTH20N65X , IXTH1R8N220P3HV , IXTH1R4N250P3 , IXTH1N450HV , IXTH1N300P3HV .