IXTH2N170D2 Todos los transistores

 

IXTH2N170D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH2N170D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 568 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 206 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

IXTH2N170D2 Datasheet (PDF)

 ..1. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf pdf_icon

IXTH2N170D2

Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

 7.1. Size:109K  ixys
 ixth2n150l.pdf pdf_icon

IXTH2N170D2

Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

 7.2. Size:140K  ixys
 ixth2n150.pdf pdf_icon

IXTH2N170D2

Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG

 8.1. Size:202K  ixys
 ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTH2N170D2

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE0224AK | PE506BA | UF630G-TN3-R | IRC833A | F5F50VX2 | 2SK815

 

 
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