IRFP250A Todos los transistores

 

IRFP250A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP250A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 204 W

Tensión drenaje-fuente |Vds|: 200 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 32 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 95 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP250A

 

IRFP250A Datasheet (PDF)

0.1. irfp250a.pdf Size:926K _samsung

IRFP250A
IRFP250A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

7.1. irfp250.pdf Size:271K _st

IRFP250A
IRFP250A

IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V

7.2. irfp250npbf.pdf Size:180K _international_rectifier

IRFP250A
IRFP250A

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

 7.3. irfp250-253.pdf Size:501K _international_rectifier

IRFP250A
IRFP250A

7.4. irfp250pbf.pdf Size:3344K _international_rectifier

IRFP250A
IRFP250A

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

 7.5. irfp250.pdf Size:164K _international_rectifier

IRFP250A
IRFP250A

7.6. irfp250mpbf.pdf Size:636K _international_rectifier

IRFP250A
IRFP250A

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

7.7. irfp250n.pdf Size:122K _international_rectifier

IRFP250A
IRFP250A

PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

7.8. irfp250 sihfp250.pdf Size:1453K _vishay

IRFP250A
IRFP250A

IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli

7.9. irfp250r irfp252r.pdf Size:188K _harris_semi

IRFP250A
IRFP250A

7.10. irfp250npbf.pdf Size:260K _inchange_semiconductor

IRFP250A
IRFP250A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

7.11. irfp250m.pdf Size:241K _inchange_semiconductor

IRFP250A
IRFP250A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

7.12. irfp250.pdf Size:400K _inchange_semiconductor

IRFP250A
IRFP250A

iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

7.13. irfp250n.pdf Size:241K _inchange_semiconductor

IRFP250A
IRFP250A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Otros transistores... IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRFP244 , IRFP244A , IRFP245 , IRFP250 , IRFP460 , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , IRFP264 .

 

 
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