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IRFP254 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP254

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 140 nC

Resistencia drenaje-fuente RDS(on): 0.14 Ohm

Empaquetado / Estuche: TO3P

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IRFP254 Datasheet (PDF)

1.1. irfp254pbf.pdf Size:1950K _upd-mosfet

IRFP254
IRFP254

PD - 95009 IRFP254PbF • Lead-Free 2/12/04 Document Number: 91214 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214 www.vishay.com 5 IRFP254PbF Document Number: 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Ou

1.2. irfp254n irfp254npbf.pdf Size:123K _upd-mosfet

IRFP254
IRFP254

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.125 • 175 °C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 • Fully Avalanche Rated Qgs (nC) 17 • Fast Switching Qgd (nC) 44 • Ease of Paralleling • Simple Drive Requirements Co

 1.3. irfp254b.pdf Size:670K _fairchild_semi

IRFP254
IRFP254

November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching minim

1.4. irfp254pbf.pdf Size:1950K _international_rectifier

IRFP254
IRFP254

PD - 95009 IRFP254PbF Lead-Free 2/12/04 Document Number: 91214 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214 www.vishay.com 5 IRFP254PbF Document Number: 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Outline

 1.5. irfp254npbf.pdf Size:189K _international_rectifier

IRFP254
IRFP254

PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175C Operating Temperature l Fast Switching RDS(on) = 125m? l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

1.6. irfp254.pdf Size:162K _international_rectifier

IRFP254
IRFP254

1.7. irfp254n.pdf Size:222K _international_rectifier

IRFP254
IRFP254

PD - 94213 IRFP254N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 125m? Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.8. irfp254a.pdf Size:948K _samsung

IRFP254
IRFP254

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.9. irfp254 sihfp254.pdf Size:1519K _vishay

IRFP254
IRFP254

IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.14 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 24 Ease of Paralleling Qgd (nC) 71 Simple Drive Requirements Configuration Single Compliant to RoHS Directi

1.10. irfp254n sihfp254n.pdf Size:155K _vishay

IRFP254
IRFP254

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) (?)VGS = 10 V 0.125 175 C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 Fully Avalanche Rated Qgs (nC) 17 Fast Switching Qgd (nC) 44 Ease of Paralleling Simple Drive Requirements Configuration Single

1.11. irfp254-257.pdf Size:192K _no

IRFP254
IRFP254



Otros transistores... IRFP244 , IRFP244A , IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRF3710 , IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 .

 

 
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