IXTA05N100HV Datasheet. Equivalente

 ..1. Size:185K  ixys
 ixta05n100hv.pdf

VDSS = 1000V IXTA05N100HV High Voltage ID25 = 750mA IXTA05N100 Power MOSFET RDS(on) 17 IXTP05N100 N-Channel Enhancement Mode TO-263HV (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 30 V G S

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 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ -

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf

Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSX TJ = 25 C to 150 C 1000 V S D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C60 W TJ

 9.3. Size:186K  ixys
 ixta08n100d2hv.pdf

Advance Technical Information High Voltage VDSX = 1000V IXTA08N100D2HV Depletion Mode ID(on) > 800mA MOSFET RDS(on) 21 N-Channel TO-263HV G S Symbol Test Conditions Maximum Ratings D (Tab) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C, RGS = 1M 1000 V G = Gate D = Drain VGSX Continuous 20 V S = Source Tab = Drain

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 ixta02n450hv ixtt02n450hv.pdf

Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Trans

 9.5. Size:184K  ixys
 ixta02n250hv.pdf

Advance Technical Information High Voltage IXTA02N250HV VDSS = 2500V Power MOSFET ID25 = 200mA RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V S = Source Tab = Drain VGSS

 9.6. Size:177K  ixys
 ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY08N50D2 MOSFET ID(on) > 800mA IXTA08N50D2 RDS(on) 4.6 IXTP08N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ - 55