IRFP254A Todos los transistores

 

IRFP254A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP254A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 221 W

Tensión drenaje-fuente |Vds|: 250 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 88 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 345 pF

Resistencia drenaje-fuente RDS(on): 0.14 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP254A

 

IRFP254A Datasheet (PDF)

0.1. irfp254a.pdf Size:948K _samsung

IRFP254A
IRFP254A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

0.2. irfp254a.pdf Size:236K _inchange_semiconductor

IRFP254A
IRFP254A

isc N-Channel MOSFET Transistor IRFP254AFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 7.1. irfp254b.pdf Size:670K _fairchild_semi

IRFP254A
IRFP254A

November 2001IRFP254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

7.2. irfp254pbf.pdf Size:1950K _international_rectifier

IRFP254A
IRFP254A

PD - 95009IRFP254PbF Lead-Free2/12/04Document Number: 91214 www.vishay.com1IRFP254PbFDocument Number: 91214 www.vishay.com2IRFP254PbFDocument Number: 91214 www.vishay.com3IRFP254PbFDocument Number: 91214 www.vishay.com4IRFP254PbFDocument Number: 91214 www.vishay.com5IRFP254PbFDocument Number: 91214 www.vishay.com6IRFP254PbFTO-247AC Package Ou

 7.3. irfp254 irfp255 irfp256 irfp257.pdf Size:192K _international_rectifier

IRFP254A
IRFP254A

7.4. irfp254npbf.pdf Size:189K _international_rectifier

IRFP254A
IRFP254A

PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques

 7.5. irfp254.pdf Size:162K _international_rectifier

IRFP254A
IRFP254A

7.6. irfp254n.pdf Size:222K _international_rectifier

IRFP254A
IRFP254A

PD - 94213IRFP254NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 125m Fully Avalanche Rated G Ease of ParallelingID = 23A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

7.7. irfp254n irfp254npbf.pdf Size:123K _vishay

IRFP254A
IRFP254A

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

7.8. irfp254 sihfp254.pdf Size:1519K _vishay

IRFP254A
IRFP254A

IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia

7.9. irfp254n sihfp254n.pdf Size:155K _vishay

IRFP254A
IRFP254A

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

7.10. irfp254-257.pdf Size:192K _no

IRFP254A
IRFP254A

7.11. irfp254.pdf Size:236K _inchange_semiconductor

IRFP254A
IRFP254A

isc N-Channel MOSFET Transistor IRFP254FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

Otros transistores... IRFP244A , IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFZ34N , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 .

 

 
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