IXFX260N17T Datasheet. Equivalente

 ..1. Size:122K  ixys
 ixfk260n17t ixfx260n17t.pdf

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =

 8.1. Size:251K  ixys
 ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2

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 ixfk26n60q ixfx26n60q.pdf

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Conti

 9.1. Size:124K  ixys
 ixfk24n100q3 ixfx24n100q3.pdf

Advance Technical Information HiperFETTM VDSS = 1000V IXFK24N100Q3 Power MOSFETs ID25 = 24A IXFX24N100Q3 Q3-Class RDS(on) 440m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1000 V D S VDGR TJ = 25 C to 150

 9.2. Size:139K  ixys
 ixfk230n20t ixfx230n20t.pdf

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 ixfk27n80q ixfx27n80q.pdf

VDSS = 800 V HiPerFETTM IXFK 27N80Q IXFX 27N80Q ID25 = 27 A Power MOSFETs RDS(on) = 320 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V

 9.4. Size:133K  ixys
 ixfk24n100 ixfx24n100.pdf

VDSS = 1000V HiPerFETTM Power IXFK24N100 ID25 = 24A MOSFETs IXFX24N100 RDS(on) 390m t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V G (T

 9.5. Size:113K  ixys
 ixfk200n10p ixfx200n10p.pdf

VDSS = 100 V IXFK 200N10P PolarTM HiPerFET ID25 = 200 A IXFX 200N10P Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20

 9.6. Size:123K  ixys
 ixfk210n17t ixfx210n17t.pdf

Advance Technical Information GigaMOSTM VDSS = 170V IXFK210N17T ID25 = 210A Power MOSFET IXFX210N17T RDS(on) 7.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =

 9.7. Size:126K  ixys
 ixfx220n15p ixfk220n15p.pdf

PolarTM Power MOSFET VDSS = 150V IXFK220N15P ID25 = 220A HiperFETTM IXFX220N15P RDS(on) 9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 150 V D S VDGR TJ = 25 C to 175 C, RGS = 1M 150 V Tab VGSS Conti