IXFX100N65X2 Datasheet. Equivalente

 ..1. Size:159K  ixys
 ixfk100n65x2 ixfx100n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK100N65X2 Power MOSFET ID25 = 100A IXFX100N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS

 6.1. Size:96K  ixys
 ixfx100n25 ixfk100n25.pdf

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c

 9.1. Size:131K  ixys
 ixfk150n30p3 ixfx150n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK150N30P3 Power MOSFETs ID25 = 150A IXFX150N30P3 RDS(on) 19m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150

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 ixfx12n90q.pdf

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 ixfk150n15 ixfx150n15.pdf

HiPerFETTM IXFK 150N15 VDSS = 150 V IXFX 150N15 ID25 = 150 A Power MOSFETs RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 150 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 150

 9.4. Size:138K  ixys
 ixfk160n30t ixfx160n30t.pdf

Advance Technical Information GigaMOSTM VDSS = 300V IXFK160N30T ID25 = 160A Power MOSFET IXFX160N30T RDS(on) 19m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C, RGS = 1M 30

 9.5. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS

 9.6. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150

 9.7. Size:138K  ixys
 ixfk180n25t ixfx180n25t.pdf

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T RDS(on) 12.9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G VDGR TJ = 25 C to 150 C, RGS = 1M

 9.8. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous

 9.9. Size:112K  ixys
 ixfh16n90 ixfx16n90.pdf

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

 9.10. Size:138K  ixys
 ixfk140n25t ixfx140n25t.pdf

Advance Technical Information GigaMOSTM VDSS = 250V IXFK140N25T ID25 = 140A Power MOSFET IXFX140N25T RDS(on) 17m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G D VDGR TJ = 25 C to 150 C, RGS = 1M

 9.11. Size:46K  ixys
 ixfk180n085 ixfx180n085.pdf

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1

 9.12. Size:80K  ixys
 ixfk180n07 ixfx180n07.pdf

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs RDS(on) = 6 m Single MOSFET Die trr 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 2

 9.13. Size:178K  ixys
 ixfk180n15p ixfx180n15p.pdf

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDS Continuous 20 V TO

 9.14. Size:116K  ixys
 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

 9.15. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf

HiPerFETTM IXFX 120N20 VDSS = 200 V IXFK 120N20 ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D I

 9.16. Size:123K  ixys
 ixfx170n20t ixfk170n20t.pdf

Advance Technical Information GigaMOSTM VDSS = 200V IXFK170N20T ID25 = 170A Power MOSFET IXFX170N20T RDS(on) 11m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 200 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =

 9.17. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf

Advance Technical Information GigaMOSTM VDSS = 300V IXFK120N30T ID25 = 120A Power MOSFET IXFX120N30T RDS(on) 24m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G D VDGR TJ = 25 C to 150 C, RGS = 1M

 9.18. Size:109K  ixys
 ixfk180n10 ixfx180n10.pdf

HiPerFETTM IXFK 180N10 VDSS = 100 V IXFX 180N10 ID25 = 180 A Power MOSFETs RDS(on) = 8 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D ID25 TC = 25 C (MOSFET chip capability) 180 A