IXFT46N30T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFH46N30TPower MOSFET ID25 = 46AIXFT46N30T RDS(on) 80m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 V DD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 300 VVG

Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-

IXFH 4N100Q VDSS = 1000 VHiPerFETTMIXFT 4N100Q ID25 = 4 APower MOSFETsRDS(on) = 3.0 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 VVGS Continuous 20 VG(TAB)DVGSM Transient

Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH42N50P2ID25 = 42APower MOSFETIXFT42N50P2 RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GDSymbol Test Conditions Maximum Ratings D (Tab)SVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-268 (IXF

IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500

Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500

Reduce The Size of Your High Power Design1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package TechnologyQ3-Class HiPerFETTM Features: Low Rdson & Qg Low Intrinsic Gate Resistance Fast Intrinsic Rectifier Excellent dV/dt Performance High Avalanche Energy Capabilities SMPD Package Features: High Speed Switching Capabilities Compact, Ultra-low Package Pr

IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie

Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con