IXFT18N100Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFT18N100Q3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 830 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6.5 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.66 Ohm
   Paquete / Cubierta: TO-268

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IXFT18N100Q3 Datasheet (PDF)

..1. Size:130K ixys
ixfh18n100q3 ixft18n100q3.pdf

Advance Technical InformationHiperFETTM VDSS = 1000VIXFT18N100Q3Power MOSFETs ID25 = 18AIXFH18N100Q3 Q3-Class RDS(on) 660m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M

9.1. Size:53K ixys
ixfh12n90q ixft12n90q.pdf

IXFH 12N90Q VDSS = 900 VHiPerFETTMIXFT 12N90Q ID25 = 12 APower MOSFETsRDS(on) = 0.9 WQ ClassN-Channel Enhancement Modetrr 200 nsAvalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM Transient 30 VID25 TC

9.2. Size:182K ixys
ixfh150n17t2 ixft150n17t2.pdf

Advance Technical InformationTrenchT2TM HiperFETTMVDSS = 175VIXFH150N17T2ID25 = 150APower MOSFETIXFT150N17T2 RDS(on) 12.0m trr 160nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 175 VGVDGR TJ = 25C to 175C, RG

9.3. Size:177K ixys
ixfh120n15p ixft120n15p.pdf

IXFH 120N15P VDSS = 150 VPolarHTTM HiPerFETIXFT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m trr 200 nsN-Channel Enhancement Mode Avalanche Energy RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS

9.4. Size:559K ixys
ixft17n80q.pdf

IXFH 17N80Q VDSS = 800 VHiPerFETTMIXFT 17N80Q ID25 = 17 APower MOSFETsRDS(on) = 0.60 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary Data SheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M

9.5. Size:180K ixys
ixfh150n20t ixft150n20t.pdf

Advance Technical InformationTrenchTM HiperFETTM VDSS = 200VIXFT150N20TPower MOSFETs ID25 = 150AIXFH150N20T RDS(on) 15m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C, RGS = 1M 200 VTO-247 (IX

9.6. Size:148K ixys
ixft12n100qhv.pdf

Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

9.7. Size:50K ixys
ixfh13n80q ixft13n80q.pdf

IXFH 13N80Q VDSS = 800 VHiPerFETTMIXFT 13N80Q ID25 = 13 APower MOSFETsRDS(on) = 0.70 WQ ClassN-Channel Enhancement Mode trr 250 nsAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 V(TAB)SVGSM

9.8. Size:177K ixys
ixfh140n10p ixft140n10p.pdf

IXFH 140N10P VDSS = 100 VPolarHVTM HiPerFETIXFT 140N10P ID25 = 140 APower MOSFETs RDS(on) 11 m N-Channel Enhancement Mode trr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continu

9.9. Size:144K ixys
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

9.10. Size:111K ixys
ixfh15n80q ixft15n80q.pdf

IXFH 15N80Q VDSS = 800 VHiPerFETTMIXFT 15N80Q ID25 = 15 APower MOSFETsRDS(on) = 0.60 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID25 TC = 25C15 AIDM

9.11. Size:556K ixys
ixft10n100 ixft12n100.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

9.12. Size:116K ixys
ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 WPower MOSFETsIXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 Wtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetTO-247 ADSymbol Test Conditions Maximum Ratings(IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 V(TAB)VGS Continuous

9.13. Size:180K ixys
ixfh120n25t ixft120n25t.pdf

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 250VIXFT120N25TPower MOSFETs ID25 = 120AIXFH120N25T RDS(on) 23m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VTO-247

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