IXFQ24N60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFQ24N60X
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 1400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de IXFQ24N60X MOSFET
IXFQ24N60X Datasheet (PDF)
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfq28n60p3 ixfh28n60p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 600VIXFQ28N60P3ID25 = 28APower MOSFETsIXFH28N60P3 RDS(on) 260m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M 600 VTO-247 ( IX
Otros transistores... IXFR12N100F , IXFR10N100F , IXFQ94N30P3 , IXFQ60N60X , IXFQ50N60X , IXFQ34N50P3 , IXFQ30N60X , IXFQ26N50P3 , IRF540N , IXFQ20N50P3 , IXFP8N50P3 , IXFP7N60P3 , IXFP5N50P3 , IXFP5N100PM , IXFP4N60P3 , IXFP36N30P3 , IXFP30N60X .
History: VBJ1322
History: VBJ1322
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