IXFP30N60X Todos los transistores

 

IXFP30N60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP30N60X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Tiempo de elevación (tr): 43 nS

Conductancia de drenaje-sustrato (Cd): 1610 pF

Resistencia drenaje-fuente RDS(on): 0.155 Ohm

Empaquetado / Estuche: TO-220

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IXFP30N60X Datasheet (PDF)

1.1. ixfa30n60x ixfp30n60x.pdf Size:206K _ixys

IXFP30N60X
IXFP30N60X

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X   RDS(on)    155m     N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M

5.1. ixfa34n65x2 ixfp34n65x2.pdf Size:205K _update-mosfet

IXFP30N60X
IXFP30N60X

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2   RDS(on)    100m     IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGS

5.2. ixfa3n120 ixfp3n120.pdf Size:565K _ixys

IXFP30N60X
IXFP30N60X

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs ? RDS(on) = 4.5 ? ? ? ? ? ? trr ? 300 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V D (TAB) VGS Continuous 20 V G D VGSM Trans

 5.3. ixfa36n30p3 ixfp36n30p3.pdf Size:155K _ixys

IXFP30N60X
IXFP30N60X

Preliminary Technical Information Polar3 TM HiPerFETTM VDSS = 300V IXFA36N30P3 Power MOSFET ID25 = 36A IXFP36N30P3   RDS(on)    110m     N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 300 V TO-220AB (IXFP) VDGR TJ = 25C to 150

5.4. ixfp3n50pm.pdf Size:107K _ixys

IXFP30N60X
IXFP30N60X

Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET ? ? RDS(on) ? 2.0 ? ? ? ? ? ? ? (Electrically Isolated Tab) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to

 5.5. ixfp34n65x2.pdf Size:205K _inchange_semiconductor

IXFP30N60X
IXFP30N60X

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP34N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga

5.6. ixfp36n20x3m.pdf Size:254K _inchange_semiconductor

IXFP30N60X
IXFP30N60X

isc N-Channel MOSFET Transistor IXFP36N20X3M ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

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