IXFP26N50P3 Todos los transistores

 

IXFP26N50P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP26N50P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.23 Ohm

Empaquetado / Estuche: TO-220AB

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IXFP26N50P3 Datasheet (PDF)

1.1. ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Size:155K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 230mΩ ≤ Ω ≤ Ω IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.1. ixfp22n65x2m.pdf Size:136K _update-mosfet

IXFP26N50P3
IXFP26N50P3

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP22N65X2M Power MOSFET ID25 = 22A   RDS(on)    145m     (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G Isolated Tab D VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Conti

5.2. ixfp20n50p3m.pdf Size:120K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFP20N50P3M Power MOSFET ID25 = 8A ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V G D S VGSM Tran

 5.3. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

5.4. ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Size:157K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

 5.5. ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Size:155K _ixys

IXFP26N50P3
IXFP26N50P3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X   RDS(on)    175m     IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.6. ixfp22n65x2m.pdf Size:203K _inchange_semiconductor

IXFP26N50P3
IXFP26N50P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

5.7. ixfp20n85x.pdf Size:220K _inchange_semiconductor

IXFP26N50P3
IXFP26N50P3

isc N-Channel MOSFET Transistor IXFP20N85X ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P

5.8. ixfp24n65x.pdf Size:205K _inchange_semiconductor

IXFP26N50P3
IXFP26N50P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP24N65X ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gat

5.9. ixfp22n65x2.pdf Size:205K _inchange_semiconductor

IXFP26N50P3
IXFP26N50P3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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