IXFP26N50P3 Todos los transistores

 

IXFP26N50P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP26N50P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.23 Ohm

Empaquetado / Estuche: TO-220AB

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IXFP26N50P3 Datasheet (PDF)

1.1. ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Size:155K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 230mΩ ≤ Ω ≤ Ω IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.1. ixfp20n50p3m.pdf Size:120K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFP20N50P3M Power MOSFET ID25 = 8A ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V G D S VGSM Tran

5.2. ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Size:157K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

 5.3. ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Size:155K _ixys

IXFP26N50P3
IXFP26N50P3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X   RDS(on)    175m     IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.4. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

IXFP26N50P3
IXFP26N50P3

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

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