IXFK24N100Q3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFK24N100Q3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1000
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 24
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24
nS
Cossⓘ - Capacitancia
de salida: 590
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44
Ohm
Paquete / Cubierta:
TO-264
Búsqueda de reemplazo de IXFK24N100Q3 MOSFET
-
Selección ⓘ de transistores por parámetros
IXFK24N100Q3 datasheet
..1. Size:124K ixys
ixfk24n100q3 ixfx24n100q3.pdf 
Advance Technical Information HiperFETTM VDSS = 1000V IXFK24N100Q3 Power MOSFETs ID25 = 24A IXFX24N100Q3 Q3-Class RDS(on) 440m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1000 V D S VDGR TJ = 25 C to 150
4.1. Size:133K ixys
ixfk24n100 ixfx24n100.pdf
VDSS = 1000V HiPerFETTM Power IXFK24N100 ID25 = 24A MOSFETs IXFX24N100 RDS(on) 390m t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V G (T
7.1. Size:158K ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Con
9.1. Size:122K ixys
ixfk260n17t ixfx260n17t.pdf
Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =
9.2. Size:162K ixys
ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf
Not for New Designs VDSS ID25 RDS(on) IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
9.3. Size:251K ixys
ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf
www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2
9.5. Size:144K ixys
ixfk27n80q ixfx27n80q.pdf
VDSS = 800 V HiPerFETTM IXFK 27N80Q IXFX 27N80Q ID25 = 27 A Power MOSFETs RDS(on) = 320 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V
9.6. Size:104K ixys
ixfk26n60q ixfx26n60q.pdf
IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Conti
9.7. Size:149K ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf
IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800
9.8. Size:113K ixys
ixfk200n10p ixfx200n10p.pdf
VDSS = 100 V IXFK 200N10P PolarTM HiPerFET ID25 = 200 A IXFX 200N10P Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20
9.9. Size:151K ixys
ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf
VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode IXFK 27N80 800 V 27 A 0.30 W Avalanche Rated, High dv/dt, Low trr IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 800 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 800 V VGS Continuo
9.10. Size:123K ixys
ixfk210n17t ixfx210n17t.pdf
Advance Technical Information GigaMOSTM VDSS = 170V IXFK210N17T ID25 = 210A Power MOSFET IXFX210N17T RDS(on) 7.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =
9.11. Size:126K ixys
ixfx220n15p ixfk220n15p.pdf
PolarTM Power MOSFET VDSS = 150V IXFK220N15P ID25 = 220A HiperFETTM IXFX220N15P RDS(on) 9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 150 V D S VDGR TJ = 25 C to 175 C, RGS = 1M 150 V Tab VGSS Conti
Otros transistores... IXFN210N30P3
, IXFN200N06
, IXFL210N30P3
, IXFL132N50P3
, IXFK90N60X
, IXFK32N90P
, IXFK30N50Q
, IXFK260N17T
, IRLB4132
, IXFK210N17T
, IXFK150N30P3
, IXFK120N65X2
, IXFK120N30P3
, IXFK100N65X2
, IXFJ26N50P3
, IXFI7N80P
, IXFH94N30T
.
History: IXFK120N65X2
