IXFH94N30T Todos los transistores

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 300V IXFT94N30T Power MOSFETs ID25 = 94A IXFH94N30T RDS(on) 36m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M 300 V TO-247 (I

Advance Technical Information Polar3TM HiperFETTM VDSS = 300V IXFT94N30P3 ID25 = 94A Power MOSFETs IXFQ94N30P3 RDS(on) 36m IXFH94N30P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*

IXFH 96N15P VDSS = 150 V PolarHTTM HiPerFET IXFV 96N15P ID25 = 96 A Power MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D (TAB) S VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175

X3-Class HiPerFETTM VDSS = 200V IXFP90N20X3 Power MOSFET ID25 = 90A IXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3 N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXFP) G D D (Tab) S TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D S VGSS Continuous