IRFP340A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP340A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 162 W

Tensión drenaje-fuente (Vds): 400 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1180 pF

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP340A

IRFP340A Datasheet (PDF)

1.1. irfp340a.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor IRFP340A FEATURES ·Drain Current –I = 11A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.55Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

1.2. irfp340a.pdf Size:933K _samsung

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

3.1. irfp340r.pdf Size:62K _upd-mosfet

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

3.2. irfp340pbf.pdf Size:1554K _upd-mosfet

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.55 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant

3.3. irfp340r.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor IRFP340R FEATURES ·Drain Current –I = 10A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.55Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

3.4. irfp340.pdf Size:172K _international_rectifier

3.5. irfp340pbf.pdf Size:1801K _international_rectifier

PD- 95712 IRFP340PbF � Lead-Free 8/2/04 Document Number: 91222 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222 www.vishay.com 5 IRFP340PbF Document Number: 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery dv/dt

3.6. irfp340-343 irf740-743.pdf Size:191K _samsung

3.7. irfp340 sihfp340.pdf Size:1548K _vishay

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 400 � Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.55 � Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT � Fast Switching Qgs (nC) 10 � Ease of Paralleling Qgd (nC) 30 � Simple Drive Requirements Configuration Single � Compliant to RoHS Directive

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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