IXFH120N25T Todos los transistores

 

IXFH120N25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH120N25T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 890 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 180 nC

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 1025 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TO-247

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IXFH120N25T Datasheet (PDF)

1.1. ixfh120n25t ixft120n25t.pdf Size:180K _ixys

IXFH120N25T
IXFH120N25T

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T ≤ Ω RDS(on) ≤ Ω ≤ 23mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V TO-247

2.1. ixfh120n15p ixft120n15p.pdf Size:177K _ixys

IXFH120N25T
IXFH120N25T

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? N-Channel Enhancement Mode ? Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V D (TAB) VGSM Transi

 4.1. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

IXFH120N25T
IXFH120N25T

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

4.2. ixfh12n90p ixfv12n90p-s.pdf Size:179K _ixys

IXFH120N25T
IXFH120N25T

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ? ? RDS(on) ? ? ? 900m? ? ? IXFV12N90PS ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25C to 150C 900 V D (TAB) VDGR TJ = 25C to 150C, RGS = 1M? 900

 4.3. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFH120N25T
IXFH120N25T

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

4.4. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFH120N25T
IXFH120N25T

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

 4.5. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

IXFH120N25T
IXFH120N25T

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB)

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