IXFA26N50P3 Datasheet. Equivalente

 ..1. Size:155K  ixys
 ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

 7.1. Size:249K  1
 ixfy26n30x3 ixfa26n30x3 ixfp26n30x3.pdf

Preliminary Technical Information VDSS = 300V X3-Class HiPERFETTM IXFY26N30X3 ID25 = 26A Power MOSFET IXFA26N30X3 RDS(on) 66m IXFP26N30X3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G S VDGR TJ = 25 C to 150 C, RGS = 1

 9.1. Size:288K  ixys
 ixfa20n85xhv ixfh20n85x ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X RDS(on) 330m IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuo

 9.2. Size:157K  ixys
 ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

 9.3. Size:179K  ixys
 ixfa22n60p3.pdf

Polar3TM HiperFETTM VDSS = 600V IXFA22N60P3 ID25 = 22A Power MOSFETs IXFP22N60P3 RDS(on) 360m IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 TO-220AB (IXFP) Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G D Tab S G S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 600 V S VDGR

 9.4. Size:155K  ixys
 ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X RDS(on) 175m IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

 9.5. Size:336K  ixys
 ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf

X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T

 9.6. Size:168K  ixys
 ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 160m IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to

 9.7. Size:205K  inchange semiconductor
 ixfa22n65x2.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA22N65X2 IIXFA22N65X2 DESCRIPTION Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS 100% Avalanche Rated Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Moto

 9.8. Size:203K  inchange semiconductor
 ixfa20n85xhv.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA20N85XHV FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAX