IXFA14N60P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFA14N60P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 327 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 178 pF

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: TO-263AA

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IXFA14N60P3 Datasheet (PDF)

1.1. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25� C to 150� C 600 V G VDGR TJ = 25� C to 150� C; RGS = 1 M? 600 V S (TAB) VGS Continuous �30 V VGSM Tranisent �40 V TO-247 (I

1.2. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

5.1. ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf Size:278K _update-mosfet

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2   RDS(on)    310m     IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

5.2. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25� C to 150� C 500 V VDGR TJ = 25� C to 150� C; RGS = 1 M? 500 V VGS Continuous �30 V VGSM Transient �4

5.3. ixfa110n15t2 ixfp110n15t2.pdf Size:204K _ixys

Preliminary Technical Information TrenchT2TM HiperFET VDSS = 150V IXFA110N15T2 ID25 = 110A Power MOSFET IXFP110N15T2 ? ? RDS(on) ? ? ? 13m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25�C to 175�C 150 V (TAB) VDGR TJ = 25�C to 175�C, RGS = 1M? 150 V TO-220 VGSS Continuous � 20 V VGSM Transient � 30 V ID25 TC

5.4. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X   RDS(on)    230m     IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to

5.5. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

5.6. ixfa180n10t2 ixfp180n10t2.pdf Size:208K _ixys

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 ? ? RDS(on) ? ? ? 6m? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25�C to 175�C 100 V TO-220AB (IXFP) VDGR TJ = 25�C to 175�C, RGS = 1M? 100 V VGSS Co

5.7. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15

5.8. ixfa180n10t2.pdf Size:204K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA180N10T2 ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAX

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