IPW65R110CFD Todos los transistores

 

IPW65R110CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW65R110CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 277.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de IPW65R110CFD MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPW65R110CFD Datasheet (PDF)

 ..1. Size:3853K  infineon
 ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf pdf_icon

IPW65R110CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 ..2. Size:3828K  infineon
 ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf pdf_icon

IPW65R110CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 ..3. Size:242K  inchange semiconductor
 ipw65r110cfd.pdf pdf_icon

IPW65R110CFD

isc N-Channel MOSFET Transistor IPW65R110CFDIIPW65R110CFDFEATURESStatic drain-source on-resistance:RDS(on)110mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for resonant SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 0.1. Size:2288K  infineon
 ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf pdf_icon

IPW65R110CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

MOSTRAR MÁS

Otros transistores... IPW65R190CFDA , IPW65R190CFD , IPW65R190C7 , IPW65R190C6 , IPW65R150CFDA , IPW65R150CFD , IPW65R125C7 , IPW65R110CFDA , IRFZ44 , IPW65R099C6 , IPW65R095C7 , IPW65R080CFDA , IPW65R065C7 , IPW65R048CFDA , IPW65R045C7 , IPW65R041CFD , IPW65R037C6 .

 

 
Back to Top

 


 
.