IPW65R048CFDA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW65R048CFDA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 63.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: TO-247

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IPW65R048CFDA datasheet

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IPW65R048CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

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IPW65R048CFDA

isc N-Channel MOSFET Transistor IPW65R048CFDA FEATURES Drain Current I = 63.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.048 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch a

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 ipw65r041cfd.pdf pdf_icon

IPW65R048CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPW65R041CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R041CFD TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

 6.2. Size:1960K  infineon
 ipw65r045c7.pdf pdf_icon

IPW65R048CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R045C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSTRAR MÁS

Otros transistores... IPW65R150CFD, IPW65R125C7, IPW65R110CFDA, IPW65R110CFD, IPW65R099C6, IPW65R095C7, IPW65R080CFDA, IPW65R065C7, IRF640N, IPW65R045C7, IPW65R041CFD, IPW65R037C6, IPW65R019C7, IPW60R330P6, IPW60R280P6, IPW60R230P6, IPW60R190P6