IPW60R125P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125P6IIPW60R125P6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

IPW60R125CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125C6IIPW60R125C6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor IPW60R125CPIIPW60R125CPFEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta