IPS65R1K5CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS65R1K5CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.9 nS

Cossⓘ - Capacitancia de salida: 18 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO-251

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IPS65R1K5CE datasheet

 ..1. Size:1727K  infineon
ips65r1k5ce.pdf pdf_icon

IPS65R1K5CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K5CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 6.1. Size:1733K  infineon
ips65r1k0ce.pdf pdf_icon

IPS65R1K5CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 6.2. Size:651K  infineon
ips65r1k4c6.pdf pdf_icon

IPS65R1K5CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPS65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPS65R1K4C6 IPAK SL 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

 8.1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R1K5CE

IPS65R650CE MOSFET IPAK SL 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h

Otros transistores... IPU06N03LAG, IPT059N15N3, IPT020N10N3, IPT015N10N5, IPT012N08N5, IPT007N06N, IPT004N03L, IPS65R950C6, TK10A60D, IPS65R1K4C6, IPS65R1K0CE, IPS090N03L, IPS075N03L, IPS060N03L, IPS050N03L, IPS040N03L, IPS031N03L