IPS65R1K5CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS65R1K5CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.9 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO-251
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IPS65R1K5CE Datasheet (PDF)
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Otros transistores... IPU06N03LAG , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , 13N50 , IPS65R1K4C6 , IPS65R1K0CE , IPS090N03L , IPS075N03L , IPS060N03L , IPS050N03L , IPS040N03L , IPS031N03L .
History: IRFG9110 | OSG65R900FF | AM7434N
History: IRFG9110 | OSG65R900FF | AM7434N



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