IPP65R420CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R420CFD Data SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R420CFD , IPB65R420CFD , IPP65R420CFDIPA65R420CFD , IPD65R420CFD , IPI65R420CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology f

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C DD t eet e 4Rev. 2.6 in lPower Management & MultimarketIn ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C DI 4 C D I D 4 C D I I 4 C D O 47 D O 1 DescriptinC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin i

isc N-Channel MOSFET Transistor IPP65R420CFDIIPP65R420CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.42Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFET+

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R065C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R190CFD Data SheetRev. 2.7FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R190C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFET+

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R225C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R125C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPP65R074C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPP65R074C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R045C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R310CFD Data SheetRev. 2.3FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R310CFD , IPB65R310CFD , IPP65R310CFDIPA65R310CFD , IPI65R310CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R660CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPB65R660CFDA, IPP65R660CFDADPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R095C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R310CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPB65R310CFDA, IPP65R310CFDADPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) princi

isc N-Channel MOSFET Transistor IPP65R280C6IIPP65R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R380E6IIPP65R380E6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R380C6IIPP65R380C6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R065C7IIPP65R065C7FEATURESStatic drain-source on-resistance:RDS(on) 0.065Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPP65R600C6IIPP65R600C6FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLU

isc N-Channel MOSFET Transistor IPP65R190C7IIPP65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,red

isc N-Channel MOSFET Transistor IPP65R310CFDIIPP65R310CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.31Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

isc N-Channel MOSFET Transistor IPP65R280E6IIPP65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R190C6IIPP65R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R225C7IIPP65R225C7FEATURESStatic drain-source on-resistance:RDS(on) 0.225Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPP65R074C6IIPP65R074C6FEATURESStatic drain-source on-resistance:RDS(on) 0.074Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSO

isc N-Channel MOSFET Transistor IPP65R045C7IIPP65R045C7FEATURESStatic drain-source on-resistance:RDS(on) 0.045Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPP65R660CFDIIPP65R660CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.66Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and rob

isc N-Channel MOSFET Transistor IPP65R099C6IIPP65R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSO

isc N-Channel MOSFET Transistor IPP65R095C7IIPP65R095C7FEATURESStatic drain-source on-resistance:RDS(on) 0.095Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPP65R190CFDIIPP65R190CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

isc N-Channel MOSFET Transistor IPP65R600E6IIPP65R600E6FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLU

isc N-Channel MOSFET Transistor IPP65R190E6IIPP65R190E6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

isc N-Channel MOSFET Transistor IPP65R150CFDIIPP65R150CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.15Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

isc N-Channel MOSFET Transistor IPP65R110CFDIIPP65R110CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.11Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and rob