IPP65R125C7 Todos los transistores

 

IPP65R125C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP65R125C7
   Código: 65C7125
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 101 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET IPP65R125C7

 

IPP65R125C7 Datasheet (PDF)

 ..1. Size:1619K  infineon
ipp65r125c7.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R125C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:2212K  infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.2. Size:2173K  infineon
ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.3. Size:2189K  infineon
ipw65r150cfda ipb65r150cfda ipp65r150cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.4. Size:2192K  infineon
ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.5. Size:3853K  infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 7.6. Size:3773K  infineon
ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.7. Size:2175K  infineon
ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R190CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R190CFDA, IPB65R190CFDAIPP65R190CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

 7.8. Size:3818K  infineon
ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.9. Size:3828K  infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 7.10. Size:6482K  infineon
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

 7.11. Size:3820K  infineon
ipw65r190cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R190CFD Data SheetRev. 2.7FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 7.12. Size:1604K  infineon
ipp65r190c7.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R190C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 7.13. Size:2288K  infineon
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 7.14. Size:2324K  infineon
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 7.15. Size:2211K  infineon
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf

IPP65R125C7
IPP65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.16. Size:245K  inchange semiconductor
ipp65r190c7.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R190C7IIPP65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,red

 7.17. Size:245K  inchange semiconductor
ipp65r190c6.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R190C6IIPP65R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 7.18. Size:245K  inchange semiconductor
ipp65r190cfd.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R190CFDIIPP65R190CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

 7.19. Size:245K  inchange semiconductor
ipp65r190e6.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R190E6IIPP65R190E6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 7.20. Size:245K  inchange semiconductor
ipp65r150cfd.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R150CFDIIPP65R150CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.15Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and r

 7.21. Size:245K  inchange semiconductor
ipp65r110cfd.pdf

IPP65R125C7
IPP65R125C7

isc N-Channel MOSFET Transistor IPP65R110CFDIIPP65R110CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.11Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and rob

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