IPP65R110CFDA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP65R110CFDA
Código: 65F6110A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 277.8 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 31.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 118 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.11 Ohm
Paquete / Cubierta: TO-220
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IPP65R110CFDA Datasheet (PDF)
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow
ipp65r110cfd.pdf
isc N-Channel MOSFET Transistor IPP65R110CFDIIPP65R110CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.11Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and rob
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History: HMS21N65
