IPP65R099C6 Todos los transistores

 ..1. Size:3785K  infineon
 ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

 ..2. Size:3828K  infineon
 ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

 ..3. Size:245K  inchange semiconductor
 ipp65r099c6.pdf

isc N-Channel MOSFET Transistor IPP65R099C6 IIPP65R099C6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSO

 6.1. Size:1584K  infineon
 ipp65r095c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R095C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and

 6.2. Size:245K  inchange semiconductor
 ipp65r095c7.pdf

isc N-Channel MOSFET Transistor IPP65R095C7 IIPP65R095C7 FEATURES Static drain-source on-resistance RDS(on) 0.095 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,re

 7.1. Size:1623K  infineon
 ipp65r065c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R065C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R065C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1067K  infineon
 ipp65r074c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPP65R074C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPP65R074C6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

 7.3. Size:1617K  infineon
 ipp65r045c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R045C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and

 7.4. Size:245K  inchange semiconductor
 ipp65r065c7.pdf

isc N-Channel MOSFET Transistor IPP65R065C7 IIPP65R065C7 FEATURES Static drain-source on-resistance RDS(on) 0.065 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,re

 7.5. Size:245K  inchange semiconductor
 ipp65r074c6.pdf

isc N-Channel MOSFET Transistor IPP65R074C6 IIPP65R074C6 FEATURES Static drain-source on-resistance RDS(on) 0.074 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSO

 7.6. Size:245K  inchange semiconductor
 ipp65r045c7.pdf

isc N-Channel MOSFET Transistor IPP65R045C7 IIPP65R045C7 FEATURES Static drain-source on-resistance RDS(on) 0.045 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOSFET offering better efficiency,re